| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Schmitz, Jurriaan
University of Twente
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2023Characterisation of Photodiodes in 22 nm FDSOI at 850 nmcitations
- 2020Anomalous Scaling of Parasitic Capacitance in FETs with a High-K Channel Materialcitations
- 2017Material properties of LPCVD processed n-type polysilicon passivating contacts and its application in PERPoly industrial bifacial solar cellscitations
- 2014Analysis of thin-film PZT/LNO stacks on an encapsulated TiN electrodecitations
- 2011Exploring Capacitance-Voltage measurements to find the Piezoelectric Coefficient of Aluminum Nitridecitations
- 2008The trade-off between tuning ratio and quality factor of BaxSr1-xTiO3 MIM capacitors on alumina substrates
- 2007Separation of intrinsic dielectric and resistive electrode losses in ferroelectric capacitors at radio frequencies
- 2006Electrical characterization of thin film ferroelectric capacitors
- 2000Ultrashallow junction formation and gate activation in deep-submicron CMOS
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document
Anomalous Scaling of Parasitic Capacitance in FETs with a High-K Channel Material
Abstract
<p>We investigate the operation of FETs with a high-K channel material, SrTiO<sub>3</sub>, (K=300). The transistors show low-leakage, high-capacitance operation with a sub-nm equivalent oxide thickness, in line with expectations. In depletion however, the gate-source capacitance appears to have an unusual 1/3power dependence on the device length and width. This awkward scaling behaviour is analyzed in detail in this paper and possible consequences for SrTiO<sub>3</sub> devices and related 2D-material transistors are discussed. It is argued to relate to the high-permittivity channel. This high permittivity is further experimentally shown to result in strong short-channel effects in 10-μ {m} -long FETs, in spite of the highly scaled equivalent oxide thickness, when the operation temperature is lowered to 4.2 K.</p>