Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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1.080 Topics available

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693.932 PEOPLE
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Schmitz, Jurriaan

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University of Twente

in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (9/9 displayed)

  • 2023Characterisation of Photodiodes in 22 nm FDSOI at 850 nm2citations
  • 2020Anomalous Scaling of Parasitic Capacitance in FETs with a High-K Channel Material1citations
  • 2017Material properties of LPCVD processed n-type polysilicon passivating contacts and its application in PERPoly industrial bifacial solar cells75citations
  • 2014Analysis of thin-film PZT/LNO stacks on an encapsulated TiN electrode12citations
  • 2011Exploring Capacitance-Voltage measurements to find the Piezoelectric Coefficient of Aluminum Nitride6citations
  • 2008The trade-off between tuning ratio and quality factor of BaxSr1-xTiO3 MIM capacitors on alumina substratescitations
  • 2007Separation of intrinsic dielectric and resistive electrode losses in ferroelectric capacitors at radio frequenciescitations
  • 2006Electrical characterization of thin film ferroelectric capacitorscitations
  • 2000Ultrashallow junction formation and gate activation in deep-submicron CMOScitations

Places of action

Chart of shared publication
Oude Alink, Mark
1 / 2 shared
Nauta, Bram
1 / 2 shared
Bakker, Jelle Hette Theodorus
1 / 1 shared
Smink, Sander
1 / 1 shared
Jong, Maurits J. De
1 / 1 shared
Hilgenkamp, Hans
1 / 12 shared
Melskens, J.
1 / 4 shared
Van De Loo, Bas W. H.
1 / 3 shared
Romijn, I. G.
1 / 1 shared
Lenes, Martijn
1 / 2 shared
Janssen, G. J. M.
1 / 2 shared
Kessels, Wilhelmus M. M.
1 / 22 shared
Geerligs, Bart L. J.
1 / 1 shared
Anker, John
1 / 2 shared
Santbergen, R.
1 / 6 shared
Luchies, Jan Marc
1 / 1 shared
Stodolny, Maciej K.
1 / 2 shared
Isabella, O.
1 / 7 shared
Hueting, Raymond
5 / 11 shared
Wolters, Rob
1 / 1 shared
Nguyen, Minh
1 / 8 shared
Kaleli, B.
1 / 1 shared
Hemert, T. Van
1 / 2 shared
Sakriotis, D.
1 / 1 shared
Tiggelman, M. P. J.
3 / 4 shared
Reimann, K.
3 / 10 shared
Liu, J.
2 / 87 shared
Mauczok, R.
2 / 3 shared
Klee, M.
3 / 4 shared
Keur, W.
3 / 5 shared
Furukawa, Y.
1 / 1 shared
Beelen, D.
1 / 2 shared
Cowern, N. E. B.
1 / 9 shared
Cubaynes, Florence N.
1 / 2 shared
Woerlee, Ph Pierre
1 / 2 shared
Berkum, Jgm Van
1 / 1 shared
Tuinhout, Hp
1 / 1 shared
De Wijgert, W. M. Van
1 / 1 shared
Zijl, J. P. Van
1 / 1 shared
Mannino, G.
1 / 9 shared
Stolk, Peter A.
1 / 2 shared
Roozeboom, F. Fred
1 / 19 shared
Verhoeven, Jfcm
1 / 2 shared
Meyssen, V. Mh
1 / 1 shared
Chart of publication period
2023
2020
2017
2014
2011
2008
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Co-Authors (by relevance)

  • Oude Alink, Mark
  • Nauta, Bram
  • Bakker, Jelle Hette Theodorus
  • Smink, Sander
  • Jong, Maurits J. De
  • Hilgenkamp, Hans
  • Melskens, J.
  • Van De Loo, Bas W. H.
  • Romijn, I. G.
  • Lenes, Martijn
  • Janssen, G. J. M.
  • Kessels, Wilhelmus M. M.
  • Geerligs, Bart L. J.
  • Anker, John
  • Santbergen, R.
  • Luchies, Jan Marc
  • Stodolny, Maciej K.
  • Isabella, O.
  • Hueting, Raymond
  • Wolters, Rob
  • Nguyen, Minh
  • Kaleli, B.
  • Hemert, T. Van
  • Sakriotis, D.
  • Tiggelman, M. P. J.
  • Reimann, K.
  • Liu, J.
  • Mauczok, R.
  • Klee, M.
  • Keur, W.
  • Furukawa, Y.
  • Beelen, D.
  • Cowern, N. E. B.
  • Cubaynes, Florence N.
  • Woerlee, Ph Pierre
  • Berkum, Jgm Van
  • Tuinhout, Hp
  • De Wijgert, W. M. Van
  • Zijl, J. P. Van
  • Mannino, G.
  • Stolk, Peter A.
  • Roozeboom, F. Fred
  • Verhoeven, Jfcm
  • Meyssen, V. Mh
OrganizationsLocationPeople

document

Exploring Capacitance-Voltage measurements to find the Piezoelectric Coefficient of Aluminum Nitride

  • Hueting, Raymond
  • Hemert, T. Van
  • Sakriotis, D.
  • Schmitz, Jurriaan
Abstract

In this work we explore an uncommon method to extract the piezoelectric coefficient of the piezoelectric material aluminum nitride. The method exploits the bias dependence of CV (capacitance voltage) measurements on M_M (metal-piezoelectric-metal) capacitors. We propose a bias dependent capacitance model for piezoelectric capacitors such as BAW (Bulk Acoustic Wave) resonators. With this model we extract both the piezoelectric coefficient and dielectric constant from the CV recording. In contrast to earlier reports we verified that our results do not depend on layer thickness, biasing and sweep direction of the CV recording. In addition, we discuss the accuracy of our measurements in depth.

Topics
  • aluminium
  • dielectric constant
  • nitride
  • piezoelectric material