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Tetzlaff, Ronald
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Publications (5/5 displayed)
- 2022Physics-based modeling of a bi-layer Al₂O₃/Nb₂O₅ analog memristive device.citations
- 2022An Analog Memristive and Memcapacitive Device for Neuromorphic Computingcitations
- 2022Graph Coloring via Locally-Active Memristor Oscillatory Networkscitations
- 2018Ultrasensitive detection of Ebola matrix protein in a memristor modecitations
- 2017Gap engineering for improved control of memristor nanosensorscitations
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document
An Analog Memristive and Memcapacitive Device for Neuromorphic Computing
Abstract
<p>A NbOx and Al2O3 bilayer metal-insulator-metal structure features capacitive state change together with gradual, non-filamentary resistive switching. The reported device offers several benefits, including no need for electroforming and intrinsic current compliance. These features are highly attractive for neuromorphic computing applications, where biological plasticity can be emulated by not only memristance but also memcapacitance of the device. To investigate the capability of a Ti/Al2O3/NbOx/Ti stack to produce the behavior necessary for mimicking the functionality of neurons or synapses, its dynamic response is studied in detail by means of pulsed I-V and C-V measurements. Additionally, the correlation between the capacitive and the memristive state change in the stack is discussed.</p>