People | Locations | Statistics |
---|---|---|
Naji, M. |
| |
Motta, Antonella |
| |
Aletan, Dirar |
| |
Mohamed, Tarek |
| |
Ertürk, Emre |
| |
Taccardi, Nicola |
| |
Kononenko, Denys |
| |
Petrov, R. H. | Madrid |
|
Alshaaer, Mazen | Brussels |
|
Bih, L. |
| |
Casati, R. |
| |
Muller, Hermance |
| |
Kočí, Jan | Prague |
|
Šuljagić, Marija |
| |
Kalteremidou, Kalliopi-Artemi | Brussels |
|
Azam, Siraj |
| |
Ospanova, Alyiya |
| |
Blanpain, Bart |
| |
Ali, M. A. |
| |
Popa, V. |
| |
Rančić, M. |
| |
Ollier, Nadège |
| |
Azevedo, Nuno Monteiro |
| |
Landes, Michael |
| |
Rignanese, Gian-Marco |
|
Hu, C.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2023Impact of film thickness on the structural, linear and non-linear optical properties of ferroelectric Bi2FeCrO6 perovskite thin filmscitations
- 2023International round robin test of environmentally benign lubricants for cold forgingcitations
- 2021A review of electromagnetic processing of materials (EPM): Heating, sintering, joining and formingcitations
- 2020Flash cold sintering: Combining water and electricitycitations
- 2020Improving the yield strength of an antibacterial 304Cu austenitic stainless steel by the reversion treatment
- 201545S5 Bioglass<sup>®</sup>–MWCNT composite: processing and bioactivitycitations
- 20152D MOSFET operation of a fully-depleted bulk MoS2 at quasi-flatband back-gatecitations
- 2014Long-wavelength silicon photonic integrated circuits
- 2013Short-wave infrared colloidal quantum dot photodetectors on siliconcitations
Places of action
Organizations | Location | People |
---|
document
Long-wavelength silicon photonic integrated circuits
Abstract
In this paper we elaborate on our development of silicon photonic integrated circuits operating at wavelengths beyond the telecommunication wavelength window. Silicon-on-insulator waveguide circuits up to 3.8 µm wavelength are demonstrated as well as germanium-on-silicon waveguide circuits operating in the 5-5 µm wavelength range. The heterogeneous integration of III-V semiconductors and IV-VI semiconductors on this platform is described for the integration of lasers and photodetectors operating in the 2-3 µm wavelength range. GeSn is proposed as an appealing approach to monolithically integrated long-wavelength detectors. Finally, nonlinear optics in silicon waveguide circuits beyond the two-photon absorption threshold is explored.