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Mouneyrac, David
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Publications (6/6 displayed)
- 2011Microwave properties of semi-insulating silicon carbide between 10 and 40 GHz and at cryogenic temperaturescitations
- 2010Detrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs, and 4H–SiC semiconductors under light illumination at cryogenic temperaturescitations
- 2009Observation of persistent photoconductivity and modified permittivity in bulk gallium arsenide and gallium phosphide samples at cryogenic temperatures
- 2008Characterization of materials and mode structure of high-Q resonators using Bragg confined modes
- 2008Modified permittivity observed in bulk gallium arsenide and gallium phosphide samples at 50 K using the whispering gallery mode methodcitations
- 2008Use of Whispering-Gallery Modes and Quasi- Modes for Broadband Characterization of Bulk Gallium Arsenide and Gallium Phosphide Samplescitations
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document
Observation of persistent photoconductivity and modified permittivity in bulk gallium arsenide and gallium phosphide samples at cryogenic temperatures
Abstract
The whispering gallery modes have been used to characterize the effect of the light on gallium arsenide and gallium phosphide placed in darkness at 50K at frequencies respectively equal to 18.94GHz and 11.54GHz. The experiment shows a change in the polarization state of the semiconductor, which is consistent with a free electron-hole creation/recombination process. The permittivity and the loss tangent of the semiconductor are modified by shifting of the free electrons from the valence band to the conduction band.