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Publications (3/3 displayed)
- 2009Observation of persistent photoconductivity and modified permittivity in bulk gallium arsenide and gallium phosphide samples at cryogenic temperatures
- 2004The dual-mode frequency-locked technique for the characterisation of the temperature coefficient of permittivity of ainsotropic materialscitations
- 2001Whispering Gallery Method of Measuring Complex Permittivity in Highly Anisotropic Materials: Discovery of a New Type of Mode in Anisotropic Dielectric Resonatorscitations
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Observation of persistent photoconductivity and modified permittivity in bulk gallium arsenide and gallium phosphide samples at cryogenic temperatures
Abstract
The whispering gallery modes have been used to characterize the effect of the light on gallium arsenide and gallium phosphide placed in darkness at 50K at frequencies respectively equal to 18.94GHz and 11.54GHz. The experiment shows a change in the polarization state of the semiconductor, which is consistent with a free electron-hole creation/recombination process. The permittivity and the loss tangent of the semiconductor are modified by shifting of the free electrons from the valence band to the conduction band.