| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Myśliwiec, Marcin
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2022Influence of Ag particle shape on mechanical and thermal properties of TIM jointscitations
- 2022Pressureless Direct Bonding of Au Metallized Substrate with Si Chips by Micro-Ag Particlescitations
- 2019Development of SLID Bonding Technology for GaN Assembly Based on Ag Microflakescitations
- 2018Solid-Liquid Interdiffusion Bonding Based on Au-Sn Intermetallic for High Temperature Applicationscitations
- 2017Combination of Solid-Liquid Interdiffusion and Sintering Bonding for GaN Devices Assemblycitations
- 2017Fluxless Pressure Ag Sintering in Creation of Au-Ag Connection Systems
- 2016Properties of silicon nitride thin overlays deposited on optical fibers – effect of fiber suspension in radio frequency plasma-enhanced chemical vapor deposition reactorcitations
- 2016Challenges in packaging of IR detectors – technology of elastic electrical connectionscitations
- 2016Die attach by diffusion Sn-Ag-Sn soldering in high temperature electronics applicationscitations
- 2016Application of Direct Bonded Copper Substrates for Prototyping of Power Electronic Modulescitations
- 2015Challenges in packaging of IR detectors – technology of elastic electrical connections
- 2014Materials and Technological Aspects of High-Temperature SiC Package Reliability
- 2014Thermal characteristics of SiC diode assembly to ceramic substratecitations
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document
Thermal characteristics of SiC diode assembly to ceramic substrate
Abstract
Silicon carbide (SiC) semiconductor diodes are studied for high power and high temperature system applications. Our packaging technology is developing to ensure a working temperature above 300°C for Schottky and PIN diodes. This work presents an investigation on the thermal properties of proposed assembly of SiC die into a ceramic package. Ag micro particles and sintering process were used for the assembly. It was found that thermal resistance of such package is dependent on assembly technology and it is near 3 K/W for Schottky diode in the temperature range from room temperature up to 200°C, and the thermal resistance is in the range 10.5 ÷ 8.7 K/W for PIN diode at temperature in the range from 20°C up to 300°C.