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Maria, Jon Paul
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Publications (7/7 displayed)
- 2022Growth-microstructure-thermal property relations in AlN thin filmscitations
- 2019Mechanical strength of cold-sintered zinc oxide under biaxial bendingcitations
- 2006Discrete Barium Strontium Titanate (BST) Thin-Film Interdigital Varactors on Alumina: Design, Fabrication, Characterization, and Applicationscitations
- 2006Voltage Controlled GaN-on-Si HFET Power Oscillator Using Thin-Film Ferroelectric Varactor Tuningcitations
- 2006Noise characteristics of an oscillator with a barium strontium titanate (BST) varactorcitations
- 2005A tunable combline bandpass filter using barium strontium titanate interdigital varactors on an alumina substratecitations
- 2004Microwave properties of bst thin film interdigital capacitors on low cost alumina substrates
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document
Voltage Controlled GaN-on-Si HFET Power Oscillator Using Thin-Film Ferroelectric Varactor Tuning
Abstract
A 1.6 GHz power oscillator with a GaN-on-Si heterostructure field effect transistor (HFET) is reported. The voltage-controlled oscillator used a thin-film barium strontium titanate (BST) interdigital varactor as the tuning element. The surface-mount varactor was fabricated using sputtered BST film and copper metallization on alumina. An output power of 1.6 W (32 dBm) is obtained with a DC conversion efficiency of 25.5%. Flat tuning sensitivity of 500 kHz/V, 49 MHz linear frequency tuning, and power flatness of better than 0.5 dB are obtained with 0?100 V tuning voltage. The maximum oscillator phase noise is ?81.4 dBc/Hz at 100 kHz offset..