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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Mueller, Maik
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2024Creep characterization of lead-free solder alloys over an extended temperature range used for fatigue modeling
- 2023Temperature-dependent Creep Characterization of Lead-free Solder Alloys Using Nanoindentation for Finite Element Modelingcitations
- 2022Corrosion study on Cu/Sn-Ag solid-liquid interdiffusion microbumps by salt spray testing with 5 wt.% NaCl solutioncitations
- 2020Grain Structure Analysis of Cu/SiO2 Hybrid Bond Interconnects after Reliability Testingcitations
- 2020Morphologies of Primary Cu6Sn5 and Ag3Sn Intermetallics in Sn–Ag–Cu Solder Ballscitations
- 2018Morphology Variations of Primary Cu6Sn5 Intermetallics in Lead-Free Solder Ballscitations
- 2018Characterization of low temperature Cu/In bonding for fine-pitch interconnects in three-dimensional integrationcitations
- 2013Microstructure investigation of Cu/SnAg solid-liquid interdiffusion interconnects by Electron Backscatter Diffractioncitations
- 2012Effects of bonding pressure on quality of SLID interconnectscitations
- 2011Solidification processes in the Sn-rich part of the SnCu systemcitations
- 2010Microstructure Characterization Of Lead‐Free Solders Depending On Alloy Compositioncitations
- 2010Metallographic preparation of the SnAgCu solders for optical microscopy and EBSD Investigationscitations
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document
Effects of bonding pressure on quality of SLID interconnects
Abstract
The investigation of the bonding pressure change on the different quality aspects of the solid-liquid interdiffusion (SLID) interconnects is presented. The stacks were produced by a flux-assisted bonding of two Si dies with an area array of square Cu/SnAg bumps on the bottom die and Cu bumps on the top die at approx. 250 °C. The bonding pressure was varied between 0 MPa, 0.35 MPa, 0.69 MPa, 1.04 MPa, 1.38 MPa, 1.73 MPa, 2.08 MPa, 2.42 MPa. Cross-sections of the stacks were analyzed by optical microscopy and scanning electron microscopy (SEM). Tilt, standoff height (SOH) variation, void fraction, interlayer thickness and Cu3Sn thickness were measured. It will be shown that increase of the bonding pressure can reduce the void fraction from 35.1 % (0 MPa) to 10.7 % (2.42 MPa) and decrease the interlayer thickness at the same time. Decrease of the interlayer thickness is accompanied by solder squeeze and increase of Cu3Sn thickness. Shear tests revealed an average shear strength of (81.3 ± 21.5) MPa for the produced samples. The analysis of the fracture surfaces with SEM revealed that the weakest interface is located between Cu6Sn5 and Cu3Sn intermetallic compounds (IMCs) close to the initial Cu bump.