| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Panchenko, Juliana
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (23/23 displayed)
- 2024Laboratory X-ray Microscopy of 3D Nanostructures in the Hard X-ray Regime Enabled by a Combination of Multilayer X-ray Opticscitations
- 2023Intermetallic Growth Study of Ultra-Thin Copper and Tin Bilayer for Hybrid Bonding Applicationscitations
- 2023Cu-Cu Thermocompression Bonding with a Self-Assembled Monolayer as Oxidation Protection for 3D/2.5D System Integrationcitations
- 2022Corrosion study on Cu/Sn-Ag solid-liquid interdiffusion microbumps by salt spray testing with 5 wt.% NaCl solutioncitations
- 2022Metallurgical aspects and joint properties of Cu-Ni-In-Cu fine-pitch interconnects for 3D integrationcitations
- 2022Determination of melting and solidification temperatures of Sn-Ag-Cu solder spheres by infrared thermographycitations
- 2020Grain Structure Analysis of Cu/SiO2 Hybrid Bond Interconnects after Reliability Testingcitations
- 2020Low temperature solid state bonding of Cu-In fine-pitch interconnects
- 2020Morphologies of Primary Cu6Sn5 and Ag3Sn Intermetallics in Sn–Ag–Cu Solder Ballscitations
- 2020Grain Structure Analysis of Cu/SiO2Hybrid Bond Interconnects after Reliability Testingcitations
- 2019Effects of isothermal storage on grain structure of Cu/Sn/Cu microbump interconnects for 3D stackingcitations
- 2018Morphology Variations of Primary Cu6Sn5 Intermetallics in Lead-Free Solder Ballscitations
- 2018Characterization of low temperature Cu/In bonding for fine-pitch interconnects in three-dimensional integrationcitations
- 2017Influence of flux-assisted isothermal storage on intermetallic compounds in Cu/SnAg microbumpscitations
- 2017Fabrication and characterization of precise integrated titanium nitride thin film resistors for 2.5D interposercitations
- 2014Degradation of Cu6Sn5 intermetallic compound by pore formation in solid-liquid interdiffusion Cu/Sn microbump interconnectscitations
- 2013Microstructure investigation of Cu/SnAg solid-liquid interdiffusion interconnects by Electron Backscatter Diffractioncitations
- 2012Effects of bonding pressure on quality of SLID interconnectscitations
- 2011The creep behaviour and microstructure of ultra small solder jointscitations
- 2011Solidification processes in the Sn-rich part of the SnCu systemcitations
- 2010Microstructure Characterization Of Lead‐Free Solders Depending On Alloy Compositioncitations
- 2010The scaling effect on microstructure and creep properties of Sn-based solderscitations
- 2010Metallographic preparation of the SnAgCu solders for optical microscopy and EBSD Investigationscitations
Places of action
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document
Effects of bonding pressure on quality of SLID interconnects
Abstract
The investigation of the bonding pressure change on the different quality aspects of the solid-liquid interdiffusion (SLID) interconnects is presented. The stacks were produced by a flux-assisted bonding of two Si dies with an area array of square Cu/SnAg bumps on the bottom die and Cu bumps on the top die at approx. 250 °C. The bonding pressure was varied between 0 MPa, 0.35 MPa, 0.69 MPa, 1.04 MPa, 1.38 MPa, 1.73 MPa, 2.08 MPa, 2.42 MPa. Cross-sections of the stacks were analyzed by optical microscopy and scanning electron microscopy (SEM). Tilt, standoff height (SOH) variation, void fraction, interlayer thickness and Cu3Sn thickness were measured. It will be shown that increase of the bonding pressure can reduce the void fraction from 35.1 % (0 MPa) to 10.7 % (2.42 MPa) and decrease the interlayer thickness at the same time. Decrease of the interlayer thickness is accompanied by solder squeeze and increase of Cu3Sn thickness. Shear tests revealed an average shear strength of (81.3 ± 21.5) MPa for the produced samples. The analysis of the fracture surfaces with SEM revealed that the weakest interface is located between Cu6Sn5 and Cu3Sn intermetallic compounds (IMCs) close to the initial Cu bump.