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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Petrov, R. H. | Madrid |
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| Bih, L. |
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| Casati, R. |
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| Kočí, Jan | Prague |
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| Azam, Siraj |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Schmitz, Jurriaan
University of Twente
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2023Characterisation of Photodiodes in 22 nm FDSOI at 850 nmcitations
- 2020Anomalous Scaling of Parasitic Capacitance in FETs with a High-K Channel Materialcitations
- 2017Material properties of LPCVD processed n-type polysilicon passivating contacts and its application in PERPoly industrial bifacial solar cellscitations
- 2014Analysis of thin-film PZT/LNO stacks on an encapsulated TiN electrodecitations
- 2011Exploring Capacitance-Voltage measurements to find the Piezoelectric Coefficient of Aluminum Nitridecitations
- 2008The trade-off between tuning ratio and quality factor of BaxSr1-xTiO3 MIM capacitors on alumina substrates
- 2007Separation of intrinsic dielectric and resistive electrode losses in ferroelectric capacitors at radio frequencies
- 2006Electrical characterization of thin film ferroelectric capacitors
- 2000Ultrashallow junction formation and gate activation in deep-submicron CMOS
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document
Characterisation of Photodiodes in 22 nm FDSOI at 850 nm
Abstract
We present the analysis and measurement results of photodiodes (PDs) fabricated in 22 nm Fully-Depleted Silicon-On-Insulator (FDSOI) technology at a wavelength of 850 nm. To the best of our knowledge this is the first paper to give detailed information about PDs in 22 nm FDSOI. FDSOI has the unique opportunity to place a PD in SOI, which is potentially very fast, on top of bulk devices such as PNP-transistors for temperature sensors. Its measured responsivity is 4 μA/W at a bandwidth (BW) of 3.4 GHz. Several bulk PDs, including PW/NW/DNW, PW/DNW/PSUB, and NW/PSUB have also been characterised. They have responsivities between 6 mA/W and 207 mA/W and BWs between 23 MHz and 5.8 GHz. 22 nm FDSOI shows potential for fully-integrated high-speed optical receivers, as it combines ∼90 nm bulk CMOS PD performance with 22 nm RF and digital processing capabilities on a single die.