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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Govenius, Joonas
VTT Technical Research Centre of Finland
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (5/5 displayed)
- 2024Atomic Layer Deposition of Molybdenum Carbide Thin Filmscitations
- 2020Enhancement of Superconductivity by Amorphizing Molybdenum Silicide Films Using a Focused Ion Beamcitations
- 2020Enhancement of Superconductivity by Amorphizing Molybdenum Silicide Films Using a Focused Ion Beamcitations
- 2019Superconducting TiN through-silicon-vias for quantum technologycitations
- 2019Superconducting TiN through-silicon-vias for quantum technologycitations
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document
Superconducting TiN through-silicon-vias for quantum technology
Abstract
<p>Through-silicon vias (TSVs) can be used to route signals and to obtain effective grounding in microwave circuits. The coating of the TSVs with a superconducting material is a challenge because of the high aspect ratio of the structures. In this paper, we present successful fabrication of superconducting 60μm diameter TSVs, coated by atomic layer deposition (ALD) of titanium nitride. The critical temperature T<sub>c</sub> is approximately 1.6 K.</p>