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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Hayne, Manus
Lancaster University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2023Defect formation in InGaAs/AlSb/InAs memory devices
- 2021Dilute Nitride GaInNAsSb for Next Generation Optical Communications
- 2021Demonstration of a Fast, Low-Voltage, III-V Semiconductor, Non-Volatile Memorycitations
- 2020Experimental and theoretical determination of the transport properties of n-AlxGa1-xSb/GaSb
- 2019Room-temperature Operation of Low-voltage, Non-volatile, Compound-semiconductor Memory Cellscitations
- 2017Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dotscitations
- 2017Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots
- 2015Nanometre scale 3D nanomechanical imaging of semiconductor structures from few nm to sub-micrometre depthscitations
- 2015Nanometre scale 3D nanomechanical imaging of semiconductor structures from few nm to sub-micrometre depthscitations
- 2013Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stackscitations
- 2013Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stackscitations
- 2008Classification and control of the origin of photoluminescence from Si nanocrystals.
- 2008Classification and control of the origin of photoluminescence from Si nanocrystals.citations
- 2003Electrical and structural characterization of defects introduced in p-SiGe during low energy erbium implantation
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document
Demonstration of a Fast, Low-Voltage, III-V Semiconductor, Non-Volatile Memory
Abstract
ULTRARAM™ is a III-V semiconductor memory technology which exploits resonant tunneling to allow ultra-low-energy memory logic switching (per unit area), whilst retaining non-volatility. Single-cell memories developed on GaAs substrates with a revised design and atomic-layer-deposition Al 2 O 3 gate dielectric demonstrate significant improvements compared to prior prototypes. Floating-gate (FG) memories with 20-μm gate length show 0/1 state contrast from 2.5-V program-read-erase-read (P/E) cycles with 500-μs pulse duration, which would scale to sub-ns switching speed at 20-nm node. Nonvolatility is confirmed by memory retention tests of 4×10 3 s with both 0 and 1 states completely invariant. Single cells demonstrate promising endurance results, undergoing 10 4 cycles without degradation. P/E cycling and disturbance tests are performed using half-voltages (±1.25 V), validating the high-density random access memory (RAM) architecture proposed previously. Finally, memory logic is retained after an equivalent of >10 5 P/E disturbances.