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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Panchenko, Juliana
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (23/23 displayed)
- 2024Laboratory X-ray Microscopy of 3D Nanostructures in the Hard X-ray Regime Enabled by a Combination of Multilayer X-ray Opticscitations
- 2023Intermetallic Growth Study of Ultra-Thin Copper and Tin Bilayer for Hybrid Bonding Applicationscitations
- 2023Cu-Cu Thermocompression Bonding with a Self-Assembled Monolayer as Oxidation Protection for 3D/2.5D System Integrationcitations
- 2022Corrosion study on Cu/Sn-Ag solid-liquid interdiffusion microbumps by salt spray testing with 5 wt.% NaCl solutioncitations
- 2022Metallurgical aspects and joint properties of Cu-Ni-In-Cu fine-pitch interconnects for 3D integrationcitations
- 2022Determination of melting and solidification temperatures of Sn-Ag-Cu solder spheres by infrared thermographycitations
- 2020Grain Structure Analysis of Cu/SiO2 Hybrid Bond Interconnects after Reliability Testingcitations
- 2020Low temperature solid state bonding of Cu-In fine-pitch interconnects
- 2020Morphologies of Primary Cu6Sn5 and Ag3Sn Intermetallics in Sn–Ag–Cu Solder Ballscitations
- 2020Grain Structure Analysis of Cu/SiO2Hybrid Bond Interconnects after Reliability Testingcitations
- 2019Effects of isothermal storage on grain structure of Cu/Sn/Cu microbump interconnects for 3D stackingcitations
- 2018Morphology Variations of Primary Cu6Sn5 Intermetallics in Lead-Free Solder Ballscitations
- 2018Characterization of low temperature Cu/In bonding for fine-pitch interconnects in three-dimensional integrationcitations
- 2017Influence of flux-assisted isothermal storage on intermetallic compounds in Cu/SnAg microbumpscitations
- 2017Fabrication and characterization of precise integrated titanium nitride thin film resistors for 2.5D interposercitations
- 2014Degradation of Cu6Sn5 intermetallic compound by pore formation in solid-liquid interdiffusion Cu/Sn microbump interconnectscitations
- 2013Microstructure investigation of Cu/SnAg solid-liquid interdiffusion interconnects by Electron Backscatter Diffractioncitations
- 2012Effects of bonding pressure on quality of SLID interconnectscitations
- 2011The creep behaviour and microstructure of ultra small solder jointscitations
- 2011Solidification processes in the Sn-rich part of the SnCu systemcitations
- 2010Microstructure Characterization Of Lead‐Free Solders Depending On Alloy Compositioncitations
- 2010The scaling effect on microstructure and creep properties of Sn-based solderscitations
- 2010Metallographic preparation of the SnAgCu solders for optical microscopy and EBSD Investigationscitations
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document
Intermetallic Growth Study of Ultra-Thin Copper and Tin Bilayer for Hybrid Bonding Applications
Abstract
<p>A low temperature bonding metal such as Sn with a melting temperature of 232°C [1] can be used to reduce the process temperature of metal bonding in hybrid bonding. In the presented work, ultra-thin Cu - Sn bilayer stack in a 5 µ m x 5 µ m × 0.8 µ m SiO2 pad has been fabricated using an immersion electroless deposition of Sn on Cu. Intermetallic growth of this stack has been studied at room temperature (RT) for many days i.e., 0 - 84 days and at different annealing temperatures i.e., 80°C-250°C for 10 seconds. Stacks with three different Cu to Sn thickness ratios of 1.5, 2 and 2.5 have been considered for this investigation. Sn thicknesses of230 nm, 270 nm and 320 nm have been electroless plated for this study. Intermetallic growth study of the top surface of these pads has been done to understand how much Sn is left (not transformed into intermetallic compounds (IMCs)) for the following bonding process. After 84 days of RT aging, it has been observed that 55.2 % of the pad's top surface (i.e., 13.8 µ m2 of 25 µ m2) reacted to form IMC in sample with 230 nm thick Sn. Whereas 48.8 % of the pad's top surface was consumed into IMC in sample with 320 nm thick Sn. Here, after 84 days of RT aging, Cu6 Sn5 IMC is observed. In the case of higher temperatures annealing, negligible change in intermetallic growth has been observed for the samples annealed at 150°C as compared to that of 0°C for all the three above mentioned Sn thicknesses. However, nearly 90 % of the pad's top surface reacted to form IMCs for all Sn thicknesses when annealed at 250°C for 10 seconds. Cu6 Sn5 IMC along with pure Sn have been observed in samples annealed at 0°C for 10 seconds. In the samples annealed at 25 0°C for 10 seconds, most of the Sn is consumed into layers of Cu6 Sn5 and Cu3 Sn IMCs.</p>