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| Naji, M. |
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| Motta, Antonella |
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| Mohamed, Tarek |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Lancaster, Suzanne
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Publications (4/4 displayed)
- 2023Reducing the tunneling barrier thickness of bilayer ferroelectric tunnel junctions with metallic electrodescitations
- 2023Toward Nonvolatile Spin-Orbit Devicescitations
- 2022Optimizing nucleation layers for the integration of ferroelectric HZO on CVD-grown graphene
- 2022Role of Oxygen Source on Buried Interfaces in Atomic-Layer-Deposited Ferroelectric Hafnia-Zirconia Thin Filmscitations
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document
Reducing the tunneling barrier thickness of bilayer ferroelectric tunnel junctions with metallic electrodes
Abstract
<p>Ferroelectric tunnel junctions (FTJs) are non-volatile devices in which the read current is controlled by the polarisation state of a ferroelectric (FE) layer [1]. Bilayer FTJs based on hafnium zirconium oxide (HZO) and a dielectric layer (DE, here Al<sub>2</sub>O<sub>3</sub>) on metallic electrodes show promise for embdedded Non-Volatile Memory and BEOL integration [2], [3]. However, the DE thickness impacts both the FTJ properties [4] and stability of the FE state [5]. Previous research indicated an optimal DE thickness of 2-3 nm [4], but this leads to a deleterious rapid polarisation loss [6]. Here, electrode work function (WF) engineering is presented as a suitable measure to reduce the tunneling barrier height, thus improving the current density of bilayer FTJs [7]. DE scaling is also proposed to retain high TER and J{on}-J{off} at reduced operating voltages.</p>