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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Li, Fan
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Publications (7/7 displayed)
- 2022The improved reliability performance of post-deposition annealed ALD-SiO2
- 2021Status and prospects of cubic silicon carbide power electronics device technologycitations
- 20213C-SiC-on-Si MOSFETs: Overcoming Material Technology Limitationscitations
- 2020Titanium as a substrate for three-dimensional hybrid electrodes for vanadium redox flow battery applications
- 2020The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatmentcitations
- 2019Viable 3C-SiC-on-Si MOSFET design disrupting current Material Technology Limitationscitations
- 2014On the application of novel high temperature oxidation processes to enhance the performance of high voltage silicon carbide PiN diodes
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document
Viable 3C-SiC-on-Si MOSFET design disrupting current Material Technology Limitations
Abstract
The cubic polytype (3C-) of Silicon Carbide (SiC) is an emerging semiconductor technology for power devices. The featured isotropic material properties along with the Wide Band Gap (WBG) characteristics make it an excellent choice for power Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). Nonetheless, material related limitations originate from the advantageous fact that 3C-SiC can be grown on Silicon (Si) wafers. One of these major limitations is an almost negligible activation of the p-type dopants after ion implantation because the annealing has to take place at relatively low temperatures. In this paper, a novel process flow for a vertical 3C-SiC-on-Si MOSFET is presentedto overcome the difficulties that currently exist in obtaining a p-body region through implantation. The proposed design has been accurately simulated with Technology Computer Aided Design (TCAD) process and device software and a comparison is performed with the conventional SiC MOSFET design. Thesimulated output characteristics demonstrated a reduced onresistance and at the same time it is shown that the blocking capability can be maintained to the same level. The promising performance of the novel design discussed in this paper ispotentially the solution needed and a huge step towards the realisation of 3C-SiC-on-Si MOSFETs with commercially grated characteristics.