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Thammaiah, Shivakumar D.
Aalborg University
in Cooperation with on an Cooperation-Score of 37%
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Publications (3/3 displayed)
- 2021Nanometer-thin pure boron CVD layers as material barrier to Au or Cu metallization of Sicitations
- 2020Investigation of Pd/MoOx/n-Si diodes for bipolar transistor and light-emitting device applicationscitations
- 2019Nanometer-thin pure B layers Grown by MBE as metal diffusion barrier on GaN Diodescitations
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document
Nanometer-thin pure B layers Grown by MBE as metal diffusion barrier on GaN Diodes
Abstract
Pure boron layers, deposited by molecular beam epitaxy (MBE) on AlGaN/GaN/p-Si substrates to a thickness of ~ 7 nm, were applied as barriers to aluminum metallization. For low-temperature deposition from 250°C - 400°C, low-saturation-current diodes to the n-type GaN were fabricated that all tolerated alloying at 400°C. After alloying, the relatively high current level of the 250°C diode was reduced to that of the other low temperature diodes, whereas 700°C B deposition resulted in high-current diode characteristics. The results suggest a favorable B-to-GaN chemistry at 350°C - 400°C.