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Publications (4/4 displayed)
- 2012Resistive switching in high-k dielectrics for non-volatile memory applications
- 2012Strain relaxation behaviour in germanium-on-insulator fabri-cated by ion implantation
- 2010Bistable resistive switching in hafnium-silicate thin films
- 2010Co and Co-Pt nanoparticles formed in silica by ion implantation
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document
Strain relaxation behaviour in germanium-on-insulator fabri-cated by ion implantation
Abstract
<p>Single crystal Ge layers of different thickness were successfully formed on bulk SiO<sub>2</sub> by ion implantation and oxidation techniques. Structural and compositional properties of the Ge layers were investigated by high-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy. The quality of the resulting layers was found to be a function of the layer thickness.</p>