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Jiang, Nian
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Publications (5/5 displayed)
- 2013Enhanced minority carrier lifetimes in GaAs/AlGaAs core-shell nanowires through shell growth optimizationcitations
- 2013III-V semiconductor nanowires for optoelectronic device applicationscitations
- 2012Polarization tunable, multicolor emission from core-shell photonic III-V semiconductor nanowirescitations
- 2012Improvement of minority carrier lifetime in GaAs/AlxGa 1-xAs core-shell nanowires
- 2012Long minority carrier lifetime in Au-catalyzed GaAs/Al xGa 1-xAs core-shell nanowirescitations
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document
Improvement of minority carrier lifetime in GaAs/AlxGa 1-xAs core-shell nanowires
Abstract
<p>GaAs/Al<sub>x</sub>Ga<sub>1-x</sub>As core-shell nanowires were grown by metal organic chemical vapour deposition with Au-catalysed GaAs cores. Cross-section transmission electron microscope bright field images show that the tapering at bottom of the nanowires is mainly caused by GaAs cap growth. Time-resolved photo-luminescence measurements of single nanowires were taken at room temperature and a minority carrier lifetime of (1.02±0.43) ns was obtained for single nanowires with Al<sub>x</sub>Ga<sub>1-x</sub>As shell grown at 750°C. A close correlation between the shell growth temperature and minority carrier lifetime has also been observed.</p>