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Venkatachalam, D. K.
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Publications (5/5 displayed)
- 2014Effect of crystallization on the reliability of unipolar resistive-switching in HfO2-based dielectricscitations
- 2014The use of electron Rutherford backscattering to characterize novel electronic materials as illustrated by a case study of sputter-deposited NbOx filmscitations
- 2012Resistive switching in high-k dielectrics for non-volatile memory applications
- 2010Bistable resistive switching in hafnium-silicate thin films
- 2010Size controlled growth of silica nanowires by thermal decomposition of thin gold films on siliconcitations
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document
Bistable resistive switching in hafnium-silicate thin films
Abstract
<p>We report on the resistive switching mechanism of dc magnetron sputtered hafnium-silicates (Hf<sub>x</sub>Si<sub>1-x</sub>O<sub>2</sub>) memory thin films. It is observed that the electroforming of these films depends on the thickness and stoichiometry of the insulator as well as on the size of the top electrode (TE). Both high-conducting state (ON) and low-conducting state (OFF) are non-polar and stable. The ratio of resistance of the ON and the OFF state is greater than 10<sup>3</sup>. Both states, performed by dc voltage sweeping and applying short pulses, are stable over 10<sup>4</sup>s at a read out voltage of 0.2V at 85°C, which are all essential properties for further resistive random access memory (RRAM) applications.</p>