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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Coleman, V. A.
in Cooperation with on an Cooperation-Score of 37%
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Publications (5/5 displayed)
- 2009Thermal quenching of photoluminescence in ZnO/ZnMgO multiple quantum wells following oxygen implantation and rapid thermal annealingcitations
- 2007Temperature dependent photoluminescence in oxygen ion implanted and rapid thermally annealed ZnOZnMgO multiple quantum wellscitations
- 2007A comparison of the mechanical properties and the impact of contact induced damage in a- and c- axis ZnO single crystals
- 2006Observation of blue shifts in ZnO/ZnMgO multiple quantum well structures by ion-implantation induced intermixingcitations
- 2002Atomic relocation of fast diffusers in impurity-free disordered p-type GaAs
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document
Atomic relocation of fast diffusers in impurity-free disordered p-type GaAs
Abstract
<p>We have used deep level transient spectroscopy (DLTS) and capacitance-voltage (C-V) measurements to study impurity free disordering (IFD) of p-type GaAs epitaxial layers grown by metal-organic chemical vapour deposition (MOCVD). Disordering was achieved using either an SiO<sub>2</sub> or native oxide layer of the same thickness. Samples, including an uncapped layer for reference, were annealed at 900°C for 30s under an Ar ambient. Impurity-free disordering resulted in an increase in the free hole concentration, with the effect being most pronounced when using the SiO<sub>2</sub> capping layer. DLTS measurements revealed a corresponding increase in the concentrations of both Cu-and Zn-related deep levels in disordered epilayers. The results presented here will be discussed in terms of the atomic relocation processes that take place during the nonequilibrium injection of excess gallium vacancies into the disordered p-type epilayers.</p>