| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Lever, P.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2005In0.5 Ga0.5As/GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor depositioncitations
- 2004Characteristics of MOCVD-Grown thin p-clad InGaAs quantum-dot laserscitations
- 2004InGaAs quantum dots grown with GaP strain compensation layerscitations
- 2003Proton-irradiation-induced intermixing of InGaAs quantum dotscitations
- 2002Growth of InGaAs quantum dots by metal organic chemical vapour deposition
- 2002Production and processing of semiconductor nanocrystals and nanostructures for photonic applications
Places of action
| Organizations | Location | People |
|---|
document
Growth of InGaAs quantum dots by metal organic chemical vapour deposition
Abstract
<p>In<sub>0.5</sub>Ga<sub>0.5</sub> As quantum dots have been grown by metal-organic chemical vapour deposition (MOCVD). The size and density of these dots are strongly affected by the growth parameters. The growth rate and V/III affect the density of the dots. Growth interrupts without A<sub>S</sub>H<sub>3</sub> are found to cause a bimodal distribution in the dots, however a small amount of AsH<sub>3</sub> during the interrupt can suppress the formation of larger dots. A thin layer of GaP below the In<sub>0.5</sub>Ga<sub>0.5</sub>As quantum dots changes the formation of the dots. The dots are smaller in width and height. The luminescence from these dots is blueshifted due to interdiffusion between the dots and the GaP buffer layer.</p>