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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Billet, Maximilien
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (3/3 displayed)
- 2022Gallium phosphide-on-insulator integrated photonic structures fabricated using micro-transfer printingcitations
- 2021Gallium phosphide transfer printing for integrated nonlinear photonics
- 2019InAlAs/InGaAs-MSM photodetectors based on optical cavity using metallic mirrors: THz frequency operation, high quantum efficiency and high saturation currentcitations
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document
Gallium phosphide transfer printing for integrated nonlinear photonics
Abstract
Integrated nonlinear photonics has drawn an increased interest as it provides scalable, compact, and low cost solutions for a large range of applications. Indeed, the high confinement of the light in integrated waveguides allows for enhanced nonlinear effects. However, mature highly nonlinear platforms such as silicon-on-insulator (SOI) circuits suffer from nonlinear losses at telecom wavelengths caused by two-photon absorption. Moreover, the platform lacks a second order nonlinear susceptibility, which is not the case for wide bandgap III-V semiconductors. Recently, gallium phosphide-on-insulator (GaP-OI) has been proposed as an efficient platform for second and third order nonlinear applications and last year we demonstrated as a proof of concept the transfer printing of GaP as a versatile technique for GaP hetero-integration.