• Norwood, R.
• Mehravar, S.
• Karvonen, L.
• Säynätjoki, Antti
• Kieu, K.
• Peyghambarian, N.
• Lipsanen, Harri
• Haggren, T.
• Honkanen, S.
• Dhaka, V.

Abstract

<p>Semiconductor nanowires (NWs) are promising components for future generation optoelectronic devices and systems such as solar cells [1], lasers [2], light-emitting diodes [3], and photodetectors [4]. Group III-V semiconductors are materials of choice to fabricate such devices because they offer excellent optical and electrical properties including a direct band gap and high electron mobility, and most importantly, they can be grown via industrial mass scale production epitaxial growth techniques such as metal organic vapor phase epitaxy (MOVPE).</p>

Topics

• phase
• mobility
• glass
• glass
• III-V semiconductor