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| Naji, M. |
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| Kočí, Jan | Prague |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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Boes, Andreas
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Publications (5/5 displayed)
- 2020Optical frequency comb generation using low stress CMOS compatible reactive sputtered silicon nitride waveguidescitations
- 2020Optical frequency comb generation using low stress reactive sputtered silicon nitride waveguides
- 2019CMOS-compatible, plasma beam assisted reactive magnetron sputtered silicon nitride films for photonic integrated circuits
- 2019Low stress, anomalous dispersive silicon nitride waveguides fabricated by reactive sputtering
- 2019Low loss CMOS-compatible silicon nitride photonics utilizing reactive sputtered thin filmscitations
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document
Low stress, anomalous dispersive silicon nitride waveguides fabricated by reactive sputtering
Abstract
<p>Silicon nitride (SiN) waveguides are a promising platform for nonlinear photonic devices, as it offers a large bandgap, low two-photon absorption, CMOS-compatible fabrication methods and a significant nonlinearity [1,2]. Prominent applications are optical frequency comb generation [2] and supercontinuum generation [3]. These applications require waveguides with an anomalous group velocity dispersion in order to be efficient, which can be achieved by tailoring the waveguide dimensions [2,3]. Optical-quality SiN films are commonly deposited by LPCVD, however the high processing temperatures (> 800 ° C) can cause a high layer stress and crack formation. In this work we investigate reactive magnetron sputtering (PVD) as a method for low temperature (< 150 °C) deposition of SiN thin-films for optical waveguides.</p>