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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Butler-Caddle, E.
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article
Rapid hot carrier relaxation and mobility increase in Sn- and Pb-containing halide perovskite semiconductors
Abstract
<p>The remarkable optoelectronic performance of metal halide perovskites has instigated fundamental research into their photophysics and photochemistry, including the fundamentals of light absorption and emission, and electrical transport. Recent studies have revealed unexpected hot carrier phenomena in metal halide perovskites, whereby at energies high above the band gap, and at high excitation intensities, long-lived hot carriers have been observed<sup>1</sup> which can undergo long-range transport.<sup>2</sup> This has opened the possibility of harvesting and exploiting hot carriers in semiconductor devices, for instance to overcome the Schockley-Queisser limit in photovoltaic cells.</p>