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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Lysevych, Mykhaylo
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2023Core-shell GaN/AlGaN nanowires grown by selective area epitaxycitations
- 2022Nonpolar Al xGa1−xN/Al yGa1−yN multiple quantum wells on GaN nanowire for UV emissioncitations
- 2022Far-Field Polarization Engineering from Nonlinear Nanoresonatorscitations
- 2022Selective Area Growth of GaN Nanowirecitations
- 2021Narrow-Bandgap InGaAsP Solar Cell with TiO2 Carrier-Selective Contactcitations
- 2020Forward and Backward Switching of Nonlinear Unidirectional Emission from GaAs Nanoantennascitations
- 2019Second-harmonic generation in (111) gallium arsenide nanoantennas
- 2019 Ultrathin Ta 2 O 5 electron-selective contacts for high efficiency InP solar cells citations
- 2019InGaAsP as a Promising Narrow Band Gap Semiconductor for Photoelectrochemical Water Splittingcitations
- 2019Ultrathin Ta2O5 electron-selective contacts for high efficiency InP solar cellscitations
- 2018Indium phosphide based solar cell using ultra-thin ZnO as an electron selective layercitations
- 2017Improved photoelectrochemical performance of GaN nanopillar photoanodescitations
- 2017Void evolution and porosity under arsenic ion irradiation in GaAs1-xSbx alloyscitations
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document
Second-harmonic generation in (111) gallium arsenide nanoantennas
Abstract
<p>Dielectric nanoantennas have emerged in recent years as a promising platform for nanoscale second-harmonic generation (SHG) light sources and as building blocks for SHG metasurfaces. The group of III-V semiconductor materials with zincblende (ZB) crystal structure has played a key role in this development since it contains materials that feature high refractive indices and low losses in the near infrared (NIR), and strong second-order nonlinearities owing to the broken inversion symmetry in these crystals. However, one drawback of these materials is the peculiar nature of the second-order nonlinear susceptibility χ<sub>ijk</sub><sup>(2)</sup> where i, j and k relate to the major crystalline axes [100], [010] and [001]. Its components are only nonzero for i ≠ j ≠ k ≠ i. This commonly leads to 'doughnut-shaped' radiation patterns with zero power radiated along the optical axis for SHG nanocylinders fabricated from (100) wafers, where the crystal axes align with the laboratory frame defined by the nanocylinder orientation [1,2]. In order to attain higher directivity along the optical axis and hence improving collection efficiency, the system's symmetry has to be reduced [2,3].</p>