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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Rostami, Habib
University of Bath
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2019Transient hot electron dynamics in single-layer TaS2citations
- 2019Transient hot electron dynamics in single-layer TaS2citations
- 2019Hot electrons modulation of third harmonic generation in graphene
- 2019Exciton routing in the heterostructure of a transition metal dichalcogenide monolayer on a paraelectric substratecitations
- 2019Transient hot electron dynamics in single-layer TaS 2citations
- 2019Transient hot electron dynamics in single-layer TaS 2citations
- 2015Theory of strain in single-layer transition metal dichalcogenidescitations
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document
Hot electrons modulation of third harmonic generation in graphene
Abstract
<p>Hot-electrons dominate the ultrafast (∼fs-ps) optical and electronic properties of metals and semiconductors [1-2] and they are exploited in a variety of applications including photovoltaics and photodetection. Here we perform power-dependent third harmonic generation (THG) measurements on gated single layer graphene (SLG) and we show that hot-electrons modulate significantly the power-law dependence of THG, inducing a large deviation from the expected cubic power-law. We use a Chemical Vapor Deposition (CVD) SLG sample transferred on Fused Silica (FS) and gated by ionic liquid (IL), Fig.1(a). We excite the sample with the idler beam of an Optical Parametric Oscillator (OPO, Coherent) at a photon energy of hω0=0.69eV. The OPO is seeded by a mode-locked Ti:Sa laser (Coherent) with 150fs pulse duration and 80MHz repetition rate. The OPO idler spot-size is∼4.7μm and the pulse duration ∼300fs.</p>