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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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García Núñez, Carlos
University of Glasgow
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2024Giant piezoelectric effect induced by porosity in inclined ZnO thin filmscitations
- 2024Optical and structural properties of silicon nitride thin films deposited by plasma enhanced chemical vapor deposition for high reflectance optical mirrors
- 2024Giant Piezoelectric Effect Induced by Porosity in Inclined ZnO Thin Filmscitations
- 2021Glancing angle deposition of nanostructured ZnO films for ultrasonicscitations
- 2019Graphene–graphite polyurethane composite based high‐energy density flexible supercapacitorscitations
- 2018Electronic skin with energy autonomy and distributed neural data processing
- 2018A novel growth method to improve the quality of GaAs nanowires grown by Ga-assisted chemical beam epitaxycitations
- 2017Metal-assisted chemical etched Si nanowires for high-performance large area flexible electronics
- 2016Fabrication and characterization of multiband solar cells based on highly mismatched alloys
- 2015Contribution to the Development of Electronic Devices Based on Zn3N2 Thin Films, and ZnO and GaAs Nanowires
- 2013p-type CuO nanowire photodetectors
- 2013Sub-micron ZnO:N particles fabricated by low voltage electrical discharge lithography on Zn3N2 sputtered filmscitations
- 2013WO3 nanoparticle-functionalized nanowires for NOx sensing
- 2011Effect of the deposition temperature on the properties of Zn3N2 layers grown by rf magnetron sputtering
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document
Glancing angle deposition of nanostructured ZnO films for ultrasonics
Abstract
Ultrasonic sensors have demonstrated great potential for non-destructive testing (NDT) of materials, being widely applicable in health care/monitoring (e.g. biomedical, muscle recovery, cancer early detection), industry, and defence (e.g. proximity sensors used in unnamed aerial vehicles - UAV; detection of submarines). Most conventional ultrasonic sensors are based on monolithic piezoelectric ceramic materials (e.g. PZT, PbTiO 3 or PMN-PT) which are too bulky and nonconforming to enable their integration on flexible substrates. To address these drawbacks, ZnO thin films have emerged as an alternative piezoelectric material for low profile and high-frequency ultrasonic transducers due to properties such as high piezoelectric coefficient, great tuneability of working frequency, large bandwidth, low-cost of materials and manufacturing, compatibility with flexible substrates, and biocompatibility. This work analyses glancing angle deposition (GLAD) of ZnO thin films at different reactive sputtering conditions optimised to meet dual requirements of highly crystalline c-axis orientation while controlling the inclined angle of resulting nanostructured films for their application as piezoelectric material in ultrasonic sensors. Characteristics of ZnO nanostructured films, including morphology, crystallinity, and composition, are analysed as a function of GLAD conditions (gas flux angle with respect the substrate surface (α) and plasma conditions (plasma power, substrate position, substrate temperature, total gas-flow, and processing/reactive gas ratio). The obtained piezoelectric values for β angles of α=88° present d33 values of 33.1±1.7 pm/V, surpassing the piezoelectric coefficient found in ZnO bulk 12.4 pm/V. The influence of film titled angle (β) on piezoelectric performance for ultrasound sensing applications will be studied.