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Jacob, Mohan V.
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Publications (15/15 displayed)
- 2023Antimicrobial graphene-based coatings for biomedical implant applicationscitations
- 2022Plasma polymers from oregano secondary metabolitescitations
- 2022Bactericidal vertically aligned graphene networks derived from renewable precursorcitations
- 2015Electrical conduction in plasma polymerized thin films of γ-terpinenecitations
- 2012Microwave properties of Yttrium Vanadate at cryogenic temperatures
- 2011The Effect of Polyterpenol Thin Film Surfaces on Bacterial Viability and Adhesioncitations
- 2008Mesurements of thin resistive films employing split post dielectric resonator technique
- 2006Temperature dependence of complex permittivity of planar microwave materialscitations
- 2005Dielectric Properties of Yttrium Vanadate Crystals from 15 K to 295 Kcitations
- 2005Precise microwave characterisation of low loss dielectrics
- 2004A cryogenic post dielectric resonator for precise microwave characterization of planar dielectric materials for superconducting circuitscitations
- 2004Complex permittivity measurements at variable temperatures of low loss dielectric substrates employing split post and single post dielectric resonatorscitations
- 2004Precise microwave characterization of MgO substrates for HTS circuits with superconducting post dielectric resonatorcitations
- 2003Measurements of loss tangent and relative permittivity of LTCC ceramics at varying temperatures and frequenciescitations
- 2003Microwave Properties of Yttrium Vanadate Crystals at Cryogenic Temperatures
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booksection
Temperature dependence of complex permittivity of planar microwave materials
Abstract
Fabrication of dielectric materials with low losses at microwave frequencies and stable dielectric properties under varying temperatures is an important and challenging area of research. In this paper characterisation of several planar dielectrics at microwave frequencies (~9.5 GHz) in the temperature range from 20 K to 290 K using a split post dielectric resonator has been presented. We have compared temperature stability of measured dielectric properties of RT5880, RT6010, LTCC, FR4 and Ba(Mg x Ta y )O 3 materials. Presented results are useful for selection of a material suitable for a specific application.