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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Iannuzzo, Francesco
Aalborg University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2024Proof-of-Concept for an On-Chip Kelvin-Emitter RTD Sensor for Junction Temperature Monitoring of IGBTscitations
- 2023Thermal Characteristics of Liquid Metal Interconnects for Power Semiconductorscitations
- 2023Thermal Characteristics of Liquid Metal Interconnects for Power Semiconductorscitations
- 2019Comparative study of wire bond degradation under power and mechanical accelerated testscitations
- 2019Highly Reliable Package using Cu Particles Sinter Paste for Next Generation Power Devices
- 2019Cost-Effective Prognostics of IGBT Bond Wires With Consideration of Temperature Swingcitations
- 2018Thermal modeling of wire-bonded power modules considering non-uniform temperature and electric current interactionscitations
- 2018Thermal modeling of wire-bonded power modules considering non-uniform temperature and electric current interactionscitations
- 2018Effect of short-circuit stress on the degradation of the SiO2 dielectric in SiC power MOSFETscitations
- 2018Effect of short-circuit stress on the degradation of the SiO 2 dielectric in SiC power MOSFETscitations
- 2018Failure analysis of a degraded 1.2 kV SiC MOSFET after short circuit at high temperaturecitations
- 2017Impact of bending speed and setup on flex cracks in multilayer ceramic capacitorscitations
- 2016Short-Circuit Robustness Assessment in Power Electronic Modules for Megawatt Applicationscitations
- 2005FPGA implementation of the race-control algorithm for the full-bridge passive resonant commutated poles converter
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document
Thermal Characteristics of Liquid Metal Interconnects for Power Semiconductors
Abstract
<p>Due to its electrical conductivity and fluidity, liquid metal interconnection has the potential to become a new industrial power semiconductors packaging application method to solve the failure of wire bonding liftoff and improve the reliability of power semiconductor applications. As a crucial characteristic in use, the thermal characteristics of liquid metal interconnects for power semiconductors are obtained experimentally in this paper. By powering a diode die in a bridge busbar liquid metal interconnect structure, the thermal resistance from the die to the ambient is extracted. The result shows that the liquid metal interconnects method has the potential to improve the thermal behavior of power semiconductors compared with wire-bonding interconnection. The finite element simulation explains the possible reasons causing abnormal temperature responses among some samples. Besides, during the test, a slow decline in the forward voltage of the module is observed.</p>