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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Parish, Giacinta
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2022Determination of thermal conductivity, thermal diffusivity and specific heat capacity of porous silicon thin films using the 3ω methodcitations
- 2019Compensating porosity gradient to produce flat, micromachined porous silicon structurescitations
- 2009Low temperature N2-based passivation technique for porous silicon thin filmscitations
- 2001Effect of growth termination conditions on the performance of AlGaN/GaN high electron mobility transistorscitations
- 2001Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSBcitations
- 2000High breakdown GaN HEMT with overlapping gate structure
- 2000A 3-10-GHz GaN-based flip-chip integrated broad-band power amplifiercitations
- 2000High breakdown GaNHEMT with overlapping gate structurecitations
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article
A 3-10-GHz GaN-based flip-chip integrated broad-band power amplifier
Abstract
In this paper, we report the latest progress of a GaN-based broad-band power amplifier using AlGaN/GaN high electron mobility transistors (HEMTs), grown on sapphire substrates, as the active devices. The devices were flip-chip integrated onto the aluminum nitride circuit board for thermal management and electric connection. The circuit topology used novel LCR-matching networks in a four-way binary-Wilkinson combiner structure. Using devices with 0.7-mum gate length and 4-mm gate width, a small-signal gain of 7 dB was obtained with 3-10-GHz bandwidth. Output power of 8 W (continuous wave) at 9.5 GHz with about 20% power-added efficiency was achieved when biased at 24 V,which is the highest output power for a power amplifier using GaN-HEMTs-on-sapphire.