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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Berger, Paul R.
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Topics
Publications (16/16 displayed)
- 2022Flexible Polymer Rectifying Diode on Plastic Foils with MoO3Hole Injection
- 2021Selective atomic layer deposition on flexible polymeric substrates employing a polyimide adhesive as a physical maskcitations
- 2021Selective atomic layer deposition on flexible polymeric substrates employing a polyimide adhesive as a physical maskcitations
- 2020RTD Light Emission around 1550 nm with IQE up to 6% at 300 Kcitations
- 20190.7-GHz Solution-Processed Indium Oxide Rectifying Diodescitations
- 2019930 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire templatecitations
- 2017High performance, Low-voltage, Solution-processable Indium Oxide Thin Film Transistors using Anodic Al2O3 Gate Dielectric.
- 2017Negative differential resistance in polymer tunnel diodes using atomic layer deposited, TiO2 tunneling barriers at various deposition temperaturescitations
- 2012200-mm CVD grown Si/SiGe resonant interband tunnel diodes optimized for high peak-to-valley current ratios
- 2011Interfacial design and structure of protein/polymer films on oxidized AlGaN surfacescitations
- 2010Plasma-polymerized multistacked bipolar gate dielectric for organic thin-film transistorscitations
- 20084.8% efficient poly(3-hexylthiophene)-fullerene derivative (1:0.8) bulk heterojunction photovoltaic devices with plasma treated Ag Ox /indium tin oxide anode modificationcitations
- 2008Enhanced emission using thin Li-halide cathodic interlayers for improved injection into poly(p-phenylene vinylene) derivative PLEDscitations
- 2008Plasma-polymerized multistacked organic bipolar filmscitations
- 2006Low sidewall damage plasma etching using ICP-RIE with HBr chemistry of Si/SiGe resonant interband tunnel diodescitations
- 2000Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealingcitations
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article
Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing
Abstract
<p>We present the characteristics of uniformly doped silicon Esaki tunnel diodes grown by low temperature molecular beam epitaxy (T<sub>growth</sub> = 275°C) using in situ boron and phosphorus doping. The effects of ex situ thermal annealing are presented for temperatures between 640 and 800°C. A maximum peak to valley current ratio (PVCR) of 1.47 was obtained at the optimum annealing temperature of 680°C for 1 min. Peak and valley (excess) currents decreased more than two orders of magnitude as annealing temperatures and times were increased with rates empirically determined to have thermal activation energies of 2.2 and 2.4 eV respectively. The decrease in current density is attributed to widening of the tunneling barrier due to the diffusion of phosphorus and boron. A peak current density of 47 kA/cm<sup>2</sup> (PVCR = 1.3) was achieved and is the highest reported current density for a Si-based Esaki diode (grown by either epitaxy or by alloying). The temperature dependence of the current voltage characteristics of a Si Esaki diode in the range from 4.2 to 325 K indicated that both the peak current and the excess current are dominated by quantum mechanical tunneling rather than by recombination. The temperature dependence of the peak and valley currents is due to the band gap dependence of the tunneling probability.</p>