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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Renaud, Gilles
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2024In situ characterisation of graphene growth on liquid copper-gallium alloys: Paving the path for cost-effective synthesiscitations
- 2024Operando characterization and molecular simulations reveal the growth kinetics of graphene on liquid copper during chemical vapor depositioncitations
- 2024Operando Characterization and Molecular Simulations Reveal the Growth Kinetics of Graphene on Liquid Copper During Chemical Vapor Depositioncitations
- 2022Tripling of the scattering vector range of X-ray reflectivity on liquid surfaces using a double crystal deflector
- 2022In situ resonant x-ray scattering at the French “CRG-IF” beamline at ESRF
- 2022In situ resonant x-ray scattering at the French “CRG-IF” beamline at ESRF
- 2020Al-rich Fe0.85 Al0.15 (100), (110) and (111) surface structurescitations
- 2019Room Temperature Commensurate Charge Density Wave in Epitaxial Strained TiTe 2 Multilayer Filmscitations
- 2016Temperature evolution of defects and atomic ordering in Si1-xGex islands on Si(001)citations
- 2015The In situ growth of Nanostructures on Surfaces (INS) endstation of the ESRF BM32 beamline: a combined UHV–CVD and MBE reactor for in situ X-ray scattering investigations of growing nanoparticles and semiconductor nanowirescitations
- 2015The In situ growth of Nanostructures on Surfaces (INS) endstation of the ESRF BM32 beamline: a combined UHV–CVD and MBE reactor for in situ X-ray scattering investigations of growing nanoparticles and semiconductor nanowirescitations
- 2013Strains Induced by Point Defects in Graphene on a Metalcitations
- 2013Strains Induced by Point Defects in Graphene on a Metalcitations
- 2012Epitaxial orientation changes in a dewetting gold film on Si(111).citations
- 2011Tracking defect type and strain relaxation in patterned Ge/Si(001) islands by x-ray forbidden reflection analysiscitations
- 2010Substrate-enhanced supercooling in AuSi eutectic dropletscitations
- 2008Growth of Co on Au(111) studied by multiwavelength anomalous grazing-incidence small-angle x-ray scattering: From ordered nanostructures to percolated thin films and nanopillarscitations
Places of action
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article
The In situ growth of Nanostructures on Surfaces (INS) endstation of the ESRF BM32 beamline: a combined UHV–CVD and MBE reactor for in situ X-ray scattering investigations of growing nanoparticles and semiconductor nanowires
Abstract
The In situ growth of Nanostructures on Surfaces (INS) endstation of the ESRF BM32 beamline: a combined UHV-CVD and MBE reactor for in situ X-ray scattering investigations of growing nanoparticles and semiconductor nanowires This paper presents the upgraded 'In situ growth of Nanoscructures on Surfaces' (INS) endstation of the InterFace beamline IF-BM32 at the European Synchrotron Radiation Facility (ESRF). This instrument, originally designed to investigate the structure of clean surfaces/interfaces/thin-films by surface X-ray diffraction, has been further developed to investigate the formation and evolution of nanostructures by combining small-and wide-angle X-ray scattering methodologies, i.e. grazing-incidence small-angle X-ray scattering (GISAXS) and grazing-incidence X-ray diffraction (GIXD). It consists of a UHV chamber mounted on a z-axis type goniometer, equipped with residual gas analysis, reflection high-energy electron diffraction (RHEED) and Auger electron spectroscopy (AES) to complete the X-ray scattering investigations. The chamber has been developed so as up to eight sources of molecular beam epitaxy (MBE) can be simultaneously mounted to elaborate the nanostructures. A chemical vapor deposition (CVD) setup has been added to expand the range of growing possibilities, in particular to investigate in situ the growth of semiconductor nanowires. This setup is presented in some detail, as well as the first in situ X-ray scattering measurements during the growth of silicon nanowires.