| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Cassan, Eric
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (28/28 displayed)
- 2023Controlling the Modal Confinement in Silicon Nanophotonic Waveguides through Dual‐Metamaterial Engineeringcitations
- 2022Heterogeneous Integration of Doped Crystalline Zirconium Oxide for Photonic Applicationscitations
- 2021Enhanced thermal stability of Ni/GeSn system using pre-amorphization by implantationcitations
- 2020Erbium-doped oxide for optical gain on hybrid silicon photonics platforms (Student Paper)
- 202040 Gbps heterostructure germanium avalanche photo receiver on a silicon chipcitations
- 202040 Gbps heterostructure germanium avalanche photo receiver on a silicon chipcitations
- 2020Third Order Nonlinear Optical Susceptibility of Crystalline Oxide Yttria-Stabilized Zirconiacitations
- 2020Impact and behavior of Sn during the Ni/GeSn solid-state reactioncitations
- 2019Towards optical amplification in complex functional oxides: exploring optical gain in erbium-doped yttria-stabilized zirconia waveguidescitations
- 2019Erbium-doped Yttria-stabilized Zirconia thin layers for photonic applications
- 2019Nonlinear third order silicon photonics enabled by dispersion and subwavelength engineeringcitations
- 2019Nonlinear third order silicon photonics enabled by dispersion and subwavelength engineeringcitations
- 2019Effects of alloying elements (Pt or Co) on nickel-based contact technology for GeSn layerscitations
- 2018High-quality crystalline yttria-stabilized-zirconia thin layer for photonic applicationscitations
- 2018High-quality crystalline yttria-stabilized-zirconia thin layer for photonic applicationscitations
- 2018Nonlinear optical properties of integrated GeSbS chalcogenide waveguidescitations
- 2017Functional oxides on Silicon and Sapphire substrates for photonic applications
- 2017Functional oxides on Silicon and Sapphire substrates for photonic applications
- 2017Third Order Nonlinear Properties of GeSbS Chalcogenide Waveguides (poster)
- 2017Linear and Third Order Nonlinear Optical Properties of GeSbS Chalcogenide Integrated Waveguides (Orale)citations
- 2016Integration of Carbon Nanotubes in Silicon Strip and Slot Waveguide Micro-Ring Resonatorscitations
- 2016Functional oxides on Silicon and Sapphire substrates for photonic applications
- 2016Coupling of semiconductor carbon nanotubes emission with silicon photonic microring resonators
- 2016Oxides on Silicon and Sapphire substrates for photonic applications
- 2016Oxides on Silicon and Sapphire substrates for photonic applications
- 2016Integration of carbon nanotubes in slot waveguides (Conference Presentation)
- 2014Investigation of the separate optical nonlinear contributions of the core and cladding materials of silicon photonics slotted waveguides (Poster)
- 2010Carrier depletion based silicon optical modulatorscitations
Places of action
| Organizations | Location | People |
|---|
article
Impact and behavior of Sn during the Ni/GeSn solid-state reaction
Abstract
Ni-based intermetallics are promising materials for forming efficient contacts in GeSn-based Si photonic devices. However, the role that Sn might have during the Ni/GeSn solid-state reaction (SSR) is not fully understood. A comprehensive analysis focused on Sn segregation during the Ni/GeSn SSR was carried out. In situ X-ray diffraction and cross-section transmission electron microscopy measurements coupled with energy-dispersive X-ray spectrometry and electron energy-loss spectroscopy atomic mappings were performed to follow the phase sequence, Sn distribution and segregation. The results showed that, during the SSR, Sn was incorporated into the intermetallic phases. Sn segregation happened first around the grain boundaries (GBs) and then towards the surface. Sn accumulation around GBs hampered atom diffusion, delaying the growth of the Ni(GeSn) phase. Higher thermal budgets will thus be mandatory for formation of contacts in high-Sn-content photonic devices, which could be detrimental for thermal stability.