| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Reboud, Vincent
CEA Grenoble
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2023Innovative annealing technology for thermally stable Ni(GeSn) alloyscitations
- 2022Recrystallization of thick implanted GeSn layers with nanosecond laser annealingcitations
- 2022Room temperature spectral characterization of direct band gap Ge$_{0.85}$Sn$_{0.15}$ LEDs and photodiodescitations
- 2022Impact of strain on Si and Sn incorporation in (Si)GeSn alloys by STEM analysescitations
- 2021GeSnOI mid-infrared laser technologycitations
- 2020Reduced Lasing Thresholds in GeSn Microdisk Cavities with Defect Management of the Optically Active Regioncitations
- 2020(Invited) Tensile Strain Engineering and Defects Management in GeSn Laser Cavitiescitations
- 2020Impact and behavior of Sn during the Ni/GeSn solid-state reactioncitations
- 2019Effects of alloying elements (Pt or Co) on nickel-based contact technology for GeSn layerscitations
- 2006Submicron three-dimensional structures fabricated by reverse contact UV nanoimprint lithographycitations
Places of action
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article
Impact and behavior of Sn during the Ni/GeSn solid-state reaction
Abstract
Ni-based intermetallics are promising materials for forming efficient contacts in GeSn-based Si photonic devices. However, the role that Sn might have during the Ni/GeSn solid-state reaction (SSR) is not fully understood. A comprehensive analysis focused on Sn segregation during the Ni/GeSn SSR was carried out. In situ X-ray diffraction and cross-section transmission electron microscopy measurements coupled with energy-dispersive X-ray spectrometry and electron energy-loss spectroscopy atomic mappings were performed to follow the phase sequence, Sn distribution and segregation. The results showed that, during the SSR, Sn was incorporated into the intermetallic phases. Sn segregation happened first around the grain boundaries (GBs) and then towards the surface. Sn accumulation around GBs hampered atom diffusion, delaying the growth of the Ni(GeSn) phase. Higher thermal budgets will thus be mandatory for formation of contacts in high-Sn-content photonic devices, which could be detrimental for thermal stability.