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| Naji, M. |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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Decoster, Stefan
IMEC
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Publications (5/5 displayed)
- 2022Patterning challenges for direct metal etch of ruthenium and molybdenum at 32 nm metal pitch and belowcitations
- 2013Lift-off protocols for thin films for use in EXAFS experimentscitations
- 2012Single Crystalline GeSn On Silicon By Solid Phase Crystallization
- 2009Implantation-induced damage in Ge: strain and disorder profiles during defect accumulation and recovery
- 2009Effect of fluence on the lattice site of implanted Er and implantation induced strain in GaN
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article
Lift-off protocols for thin films for use in EXAFS experiments
Abstract
<jats:p>Lift-off protocols for thin films for improved extended X-ray absorption fine structure (EXAFS) measurements are presented. Using wet chemical etching of the substrate or the interlayer between the thin film and the substrate, stand-alone high-quality micrometer-thin films are obtained. Protocols for the single-crystalline semiconductors GeSi, InGaAs, InGaP, InP and GaAs, the amorphous semiconductors GaAs, GeSi and InP and the dielectric materials SiO<jats:sub>2</jats:sub>and Si<jats:sub>3</jats:sub>N<jats:sub>4</jats:sub>are presented. The removal of the substrate and the ability to stack the thin films yield benefits for EXAFS experiments in transmission as well as in fluorescence mode. Several cases are presented where this improved sample preparation procedure results in higher-quality EXAFS data compared with conventional sample preparation methods. This lift-off procedure can also be advantageous for other experimental techniques (<jats:italic>e.g.</jats:italic>small-angle X-ray scattering) that benefit from removing undesired contributions from the substrate.</jats:p>