People | Locations | Statistics |
---|---|---|
Naji, M. |
| |
Motta, Antonella |
| |
Aletan, Dirar |
| |
Mohamed, Tarek |
| |
Ertürk, Emre |
| |
Taccardi, Nicola |
| |
Kononenko, Denys |
| |
Petrov, R. H. | Madrid |
|
Alshaaer, Mazen | Brussels |
|
Bih, L. |
| |
Casati, R. |
| |
Muller, Hermance |
| |
Kočí, Jan | Prague |
|
Šuljagić, Marija |
| |
Kalteremidou, Kalliopi-Artemi | Brussels |
|
Azam, Siraj |
| |
Ospanova, Alyiya |
| |
Blanpain, Bart |
| |
Ali, M. A. |
| |
Popa, V. |
| |
Rančić, M. |
| |
Ollier, Nadège |
| |
Azevedo, Nuno Monteiro |
| |
Landes, Michael |
| |
Rignanese, Gian-Marco |
|
Pallecchi, Ilaria
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2023Mechanochemical Synthesis of Sustainable Ternary and Quaternary Nanostructured Cu2SnS3, Cu2ZnSnS4, and Cu2ZnSnSe4 Chalcogenides for Thermoelectric Applicationscitations
- 2023Mechanochemical Synthesis of Sustainable Ternary and Quaternary Nanostructured Cu2SnS3, Cu2ZnSnS4, and Cu2ZnSnSe4 Chalcogenides for Thermoelectric Applicationscitations
- 2023Investigation and field effect tuning of thermoelectric properties of SnSe2 flakescitations
- 2019Evidence of the isoelectronic character of F doping in SmFeAsO1−x F x : a first-principles investigationcitations
- 2016Nanopatterning process based on epitaxial masking for the fabrication of electronic and spintronic devices made of La0.67Sr0.33MnO3/LaAlO3/SrTiO3 heterostructures with in situ interfacescitations
- 2014Thermoelectric properties of Zn4Sb3 intermetallic compound doped with Aluminum and Silvercitations
- 2013Persistent Photoconductivity in 2D Electron Gases at Different Oxide Interfacescitations
- 2006Current-driven hysteresis effects in manganite spintronics devicescitations
Places of action
Organizations | Location | People |
---|
article
Investigation and field effect tuning of thermoelectric properties of SnSe2 flakes
Abstract
<p>The family of van der Waals dichalcogenides (vdWDs) includes a large number of compositions and phases, exhibiting varied properties and functionalities. They have opened up a novel electronics of two-dimensional materials, characterized by higher integration and interfaces which are atomically sharper and cleaner than conventional electronics. Among these functionalities, some vdWDs possess remarkable thermoelectric properties. SnSe2 has been identified as a promising thermoelectric material on the basis of its estimated electronic and transport properties. In this work we carry out experimental measurements of the electric and thermoelectric properties of SnSe2 flakes. For a 30-μm-thick SnSe2 flake at room temperature, we measure electron mobility of 40 cm2V-1s-1, a carrier density of 4×1018cm-3, a Seebeck coefficient S≈-400μV/K, and thermoelectric power factor S2σ≈0.35mWm-1K-2. The comparison of experimental results with theoretical calculations shows fair agreement and indicates that the dominant carrier scattering mechanisms are polar optical phonons at room temperature and ionized impurities below 50 K. In order to explore possible improvement of the thermoelectric properties, we carry out reversible electrostatic doping on a thinner flake, in a field effect setup. On this 75-nm-thick SnSe2 flake, we measure a field effect variation of the Seebeck coefficient of up to 290% at low temperature, and a corresponding variation of the thermoelectric power factor of up to 1050%. We find that the power factor increases with the depletion of n-type charge carriers. Field effect control of thermoelectric transport opens perspectives for boosting energy harvesting and novel switching technologies based on two-dimensional materials.</p>