| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Goennenwein, Sebastian T. B.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (25/25 displayed)
- 2024Electrically induced angular momentum flow between separated ferromagnetscitations
- 2024Crystallization dynamics of amorphous yttrium iron garnet thin filmscitations
- 2024Single-crystalline YIG flakes with uniaxial in-plane anisotropy and diverse crystallographic orientationscitations
- 2024Observation of the anomalous Nernst effect in altermagnetic candidate Mn5Si3citations
- 2023Aluminium substituted yttrium iron garnet thin films with reduced Curie temperaturecitations
- 2023Emission of coherent THz magnons in an antiferromagnetic insulator triggered by ultrafast spin–phonon interactionscitations
- 2023Emission of coherent THz magnons in an antiferromagnetic insulator triggered by ultrafast spin–phonon interactionscitations
- 2023Competitive actions of MnSi in the epitaxial growth of Mn5Si3 thin films on Si(111)citations
- 2023Anomalous Nernst effect in perpendicularly magnetized τ-MnAl thin filmscitations
- 2021Magnetic and Electronic Properties of Weyl Semimetal Co2MnGa Thin Filmscitations
- 2021Magnetic and Electronic Properties of Weyl Semimetal Co$_{2}$MnGa Thin Filmscitations
- 2021Broadband terahertz probes of anisotropic magnetoresistance disentangle extrinsic and intrinsic contributionscitations
- 2021Broadband terahertz probes of anisotropic magnetoresistance disentangle extrinsic and intrinsic contributionscitations
- 2021Magnetic and Electronic Properties of Weyl Semimetal Co 2 MnGa Thin Filmscitations
- 2020Control of positive and negative magnetoresistance in iron oxide−iron nanocomposite thin films for tunable magnetoelectric nanodevicescitations
- 2020Static magnetic proximity effects and spin Hall magnetoresistance in Pt/Y3Fe5O12 and inverted Y3Fe5O12/Pt bilayerscitations
- 2020Control of Positive and Negative Magnetoresistance in Iron Oxide : Iron Nanocomposite Thin Films for Tunable Magnetoelectric Nanodevices
- 2020Static magnetic proximity effects and spin Hall magnetoresistance in Pt/Y$_{3}$Fe$_{5}$O$_{12}$ and inverted Y$_{3}$Fe$_{5}$O$_{12}$/Pt bilayerscitations
- 2019Exchange-Enhanced Ultrastrong Magnon-Magnon Coupling in a Compensated Ferrimagnetcitations
- 2018Spin Hall magnetoresistance in the non-collinear ferrimagnet GdIG close to the compensation temperature
- 2016Impact of the interface quality on the spin Hall magnetoresistance in Pt/YIG hybrids
- 2014Zinc oxide : From dilute magnetic doping to spin transportcitations
- 2013Quantitative study of the spin Hall magnetoresistance in ferromagnetic insulator/normal metal hybridscitations
- 2011Magnetic microstructure and magnetotransport in Co2FeAl Heusler compound thin filmscitations
- 2009Voltage controlled inversion of magnetic anisotropy in a ferromagnetic thin film at room temperaturecitations
Places of action
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article
Competitive actions of MnSi in the epitaxial growth of Mn5Si3 thin films on Si(111)
Abstract
Some magnetically ordered phases of the Mn5Si3 crystal are proving to be prototypes for the study of the new fundamental spin physics related to the spontaneous breaking of the time-reversal symmetry despite a zero net magnetization. Here, we report on a route to grow epitaxial Mn5Si3 thin films on Si(111). To this end, we use Mn and Si codeposition in a molecular beam epitaxy system and carefully tune the deposition rates, the growth temperature, and the annealing temperature. We assessed the silicide phase-formation and morphology using reflection high-energy electron diffraction, x-ray diffraction, high-resolution transmission electron mi- croscopy (HRTEM) and atomic force microscopy. Layers containing only Mn5Si3 could be stabilized under very restrictive conditions, by tuning the Mn/Si flux ratio to match the compound stoichiometry and adjusting the substrate temperature during growth to 443 K. HRTEM imaging revealed the existence of an interfacial amorphous layer of few nanometers thickness. Annealing the heterostructure up to 573 K led to the formation of MnSi at the vicinity of the Mn5Si3/Si(111) interface, which significantly reduced the nucleation barrier of Mn5Si3. High-quality crystalline Mn5Si3 thin films were then formed with the following epitaxial relationships: Mn5Si3 (0001)[011̄0]//MnSi(111)[2̄11]//Si(111)[11̄0]. Our experiments showed that the formation of MnSi is enhanced at a growth temperature above 473 K or for a longer annealing step, while the crystalline quality of the Mn5Si3 overlayer is correspondingly degraded leading to textured thin films. The growth pathways and structural properties of the manganese silicides can be rationalized in terms of reactions maximizing the free-energy lowering rate. Moreover, we found that the magnetic and the magnetotransport properties can be used as an efficient tool to track both Mn5Si3 crystallinity and proportion in the deposited layers.