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Kluth, Elias
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article
Molecular beam epitaxy of single-crystalline bixbyite (In<SUB>1<SUB>−x</SUB>Ga<SUB>x</SUB> ) 2</SUB>O<SUB>3</SUB> films (x ≤0.18 ): Structural properties and consequences of compositional inhomogeneity
Abstract
We report the heteroepitaxial growth of single-crystalline bixbyite (In<SUB>1<SUB>−x</SUB>Ga<SUB>x</SUB>) 2</SUB>O<SUB>3</SUB> films on (111)-oriented yttria-stabilized zirconia substrates using plasma-assisted molecular beam epitaxy. A pure In<SUB>2</SUB>O<SUB>3</SUB> buffer layer between the substrate and (In<SUB>1<SUB>−x</SUB>Ga<SUB>x</SUB>) 2</SUB>O<SUB>3</SUB> alloy is shown to result in smoother film surfaces and significantly improved crystallinity. Transmission electron microscopy confirms the single crystallinity up to x =0.18 and only slight film quality deterioration with increasing Ga content. X-ray diffraction demonstrates partially relaxed layers with lattice parameters fitting well to Vegard's law. However, the Ga cations are not evenly distributed within the films containing nominally x >0.11 : inclusions with high Ga density up to x =0.50 are observed within a "matrix" with x ≈0.08 . The cubic bixbyite phase is preserved in both the matrix and the inclusions, which is in contrast to previous work reporting secondary, Ga-rich monoclinic or hexagonal phases forming beyond the solubility limit (of x ≈0.10 ) of Ga in bixbyite In<SUB>2</SUB>O<SUB>3</SUB> . Moreover, for x ≥0.11 , both the Raman phonon lines and the optical absorption onset remain nearly constant. Hard x-ray photoelectron spectroscopy measurements also indicate a widening of the band gap and exhibit similar saturation of the Ga 2 p core level position for high Ga contents. This saturation behavior of the spectroscopic properties largely reflects the properties of the matrix of the film, while the results of x-ray diffraction are related only to the average (matrix and inclusions) film composition....