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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Albrecht, Martin
in Cooperation with on an Cooperation-Score of 37%
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Publications (15/15 displayed)
- 2024Polar discontinuity governs surface segregation and interface termination: A case study of LaInO$_3$/BaSnO$_3$citations
- 2024Polar discontinuity governs surface segregation and interface termination: A case study of LaIn O3/ BaSn O3
- 2024FAIR Data Infrastructure with Enhanced Functionality and Domain Specific Applications
- 2024FAIR Data Infrastructure with Enhanced Functionality and Domain Specific Applications
- 2023Dislocation climb in AlN crystals grown at low-temperature gradients revealed by 3D X-ray diffraction imagingcitations
- 2022Molecular beam epitaxy of single-crystalline bixbyite (In<SUB>1<SUB>−x</SUB>Ga<SUB>x</SUB> ) 2</SUB>O<SUB>3</SUB> films (x ≤0.18 ): Structural properties and consequences of compositional inhomogeneitycitations
- 2021Influence of Sr deficiency on structural and electrical properties of SrTiO3 thin films grown by metal–organic vapor phase epitaxycitations
- 2020Control of phase formation of (AlxGa1 - X)2O3thin films on c-plane Al2O3
- 2020Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1)citations
- 2019Ultra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa2O4 single crystals
- 2018Defect generation by nitrogen during pulsed sputter deposition of GaNcitations
- 2016Synthesis and catalytic applications of 1,2,3-triazolylidene gold(I) complexes in silver-free oxazoline syntheses and C-H bond activationcitations
- 2012The Potential of N-Heterocyclic Carbene Complexes as Components for Electronically Active Materialscitations
- 2012A magnetic iron(III) switch with controlled and adjustable thermal response for solution processingcitations
- 2010The Potential of N-Heterocyclic Carbene Complexes as Components for Electronically Active Materialscitations
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article
Molecular beam epitaxy of single-crystalline bixbyite (In<SUB>1<SUB>−x</SUB>Ga<SUB>x</SUB> ) 2</SUB>O<SUB>3</SUB> films (x ≤0.18 ): Structural properties and consequences of compositional inhomogeneity
Abstract
We report the heteroepitaxial growth of single-crystalline bixbyite (In<SUB>1<SUB>−x</SUB>Ga<SUB>x</SUB>) 2</SUB>O<SUB>3</SUB> films on (111)-oriented yttria-stabilized zirconia substrates using plasma-assisted molecular beam epitaxy. A pure In<SUB>2</SUB>O<SUB>3</SUB> buffer layer between the substrate and (In<SUB>1<SUB>−x</SUB>Ga<SUB>x</SUB>) 2</SUB>O<SUB>3</SUB> alloy is shown to result in smoother film surfaces and significantly improved crystallinity. Transmission electron microscopy confirms the single crystallinity up to x =0.18 and only slight film quality deterioration with increasing Ga content. X-ray diffraction demonstrates partially relaxed layers with lattice parameters fitting well to Vegard's law. However, the Ga cations are not evenly distributed within the films containing nominally x >0.11 : inclusions with high Ga density up to x =0.50 are observed within a "matrix" with x ≈0.08 . The cubic bixbyite phase is preserved in both the matrix and the inclusions, which is in contrast to previous work reporting secondary, Ga-rich monoclinic or hexagonal phases forming beyond the solubility limit (of x ≈0.10 ) of Ga in bixbyite In<SUB>2</SUB>O<SUB>3</SUB> . Moreover, for x ≥0.11 , both the Raman phonon lines and the optical absorption onset remain nearly constant. Hard x-ray photoelectron spectroscopy measurements also indicate a widening of the band gap and exhibit similar saturation of the Ga 2 p core level position for high Ga contents. This saturation behavior of the spectroscopic properties largely reflects the properties of the matrix of the film, while the results of x-ray diffraction are related only to the average (matrix and inclusions) film composition....