| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Žukauskaitė, Agnė
Fraunhofer Institute for Organic Electronics, Electron Beam and Plasma Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2024Volumetric 3D-Printed Piezoelectric Polymer Filmscitations
- 2022Laser Ultrasound Investigations of AlScN(0001) and AlScN(11-20) Thin Films Prepared by Magnetron Sputter Epitaxy on Sapphire Substratescitations
- 2022Static High Voltage Actuation of Piezoelectric AlN and AlScN Based Scanning Micromirrorscitations
- 2021Stability and residual stresses of sputtered wurtzite AlScN thin filmscitations
- 2014Metastable ScAlN and YAlN Thin Films Grown by Reactive Magnetron Sputter Epitaxy
- 2012Microstructure and Dielectric Properties of Piezoelectric Magnetron Sputtered w-ScxAl1-xN thin filmscitations
- 2011Anomalously high thermoelectric power factor in epitaxial ScN thin filmscitations
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article
Stability and residual stresses of sputtered wurtzite AlScN thin films
Abstract
Scandium-alloying of aluminum nitride (AlScN) enhances the piezoelectric properties of the material and increases the performance of piezoelectric microelectromechanical systems (MEMS). However, this enhancement is caused by the destabilization of the wurtzite phase and so far the stability of AlScN thin films has not been sufficiently studied. Stability is especially important for piezoelectric devices because changes to the film microstructure or residual stress can lead to drastic changes in the device behavior. The stability of AlScN is investigated by annealing sputtered films and characterizing the resulting changes. It is found that the wurtzite phase of Al 0.7 Sc 0.3 N is stable at least up to 1000°C and annealing increases the crystal quality, reaching a maximum at 800°C. When annealed for more than 100 h at 1000°C, argon used in sputtering segregates into the grain boundaries and causes compressive strains and formation of rock-salt phase. Additionally, annealing at 1000∘C for 5 h reduces the average tensile stress by approximately 1 GPa.