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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Bertran, François
European Commission
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (19/19 displayed)
- 2024Van der Waals epitaxy of Weyl-semimetal Td-WTe2citations
- 2024Large-Scale Epitaxial Integration of Single-Crystalline BiSb Topological Insulator on GaAs (111)Acitations
- 2024Two-dimensional to bulk crossover of the WSe2 electronic band structure
- 2023Testing the topological insulator behavior of half-Heusler PdYBi and PtYBi (111) epitaxial thin filmscitations
- 2023Quasi van der Waals Epitaxy of Rhombohedral-Stacked Bilayer WSe 2 on GaP(111) Heterostructurecitations
- 2023Intrinsic defects and mid-gap states in quasi-one-dimensional indium telluridecitations
- 2022Effect of the valence state on the band magnetocrystalline anisotropy in two-dimensional rare-earth/noble-metal compoundscitations
- 2021Spin–Charge Interconversion in KTaO 3 2D Electron Gasescitations
- 2021Dispersing and semi-flat bands in the wide band gap two-dimensional semiconductor bilayer silicon oxidecitations
- 2021Dispersing and semi-flat bands in the wide band gap two-dimensional semiconductor bilayer silicon oxidecitations
- 2021Spin–Charge Interconversion in KTaO3 2D Electron Gasescitations
- 2018Epitaxial Heusler Superlattice Co2MnAl/Fe2MnAl with Perpendicular Magnetic Anisotropy and Termination-Dependent Half-Metallicitycitations
- 2018Toward efficient spin/charge conversion using topological insulator surface (Conference Presentation)
- 2018Epitaxial Heusler superlattice Co 2 MnAl / Fe 2 MnAl with perpendicular magnetic anisotropy and termination-dependent half-metallicitycitations
- 2018Cobalt-based Heusler alloys for spintronics ; Cobalt-based Heusler alloys for spintronics: Half-metallicity and ultra-low damping investigation of the Co$_2$ MnX series
- 2016Direct evidence for minority spin gap in the Co 2 MnSi Heusler compoundcitations
- 2016Quasi one-dimensional band dispersion and surface metallization in long-range ordered polymeric wirescitations
- 2013The 2 root 3 x 2 root 3R30 surface reconstruction of alkali/Si(111):B semiconducting surfaces
- 2010Bipolaronic insulator on alkali/Si(111):B-2√3×2√3R30° interfacescitations
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document
Epitaxial Heusler Superlattice Co2MnAl/Fe2MnAl with Perpendicular Magnetic Anisotropy and Termination-Dependent Half-Metallicity
Abstract
Single-crystal Heusler atomic-scale superlattices that have been predicted to exhibit perpendicular magnetic anisotropy and half-metallicity have been successfully grown by molecular beam epitaxy. Superlattices consisting of full-Heusler Co$_2$MnAl and Fe$_2$MnAl with one to three unit cell periodicity were grown on GaAs (001), MgO (001), and Cr (001)/MgO (001). Electron energy loss spectroscopy maps confirmed clearly segregated epitaxial Heusler layers with high cobalt or high iron concentrations for samples grown near room temperature on GaAs (001). Superlattice structures grown with an excess of aluminum had significantly lower thin film shape anisotropy and resulted in an out-of-plane spin reorientation transition at temperatures below 200 K for samples grown on GaAs (001). Synchrotron-based spin resolved photoemission spectroscopy found that the superlattice structure improves the Fermi level spin polarization near the X point in the bulk Brillouin zone. Stoichiometric Co$_2$MnAl terminated superlattice grown on MgO (001) had a spin polarization of 95%, while a pure Co$_2$MnAl film had a spin polarization of only 65%. ; Comment: 14 pages, 1 table, 6 figures