People | Locations | Statistics |
---|---|---|
Naji, M. |
| |
Motta, Antonella |
| |
Aletan, Dirar |
| |
Mohamed, Tarek |
| |
Ertürk, Emre |
| |
Taccardi, Nicola |
| |
Kononenko, Denys |
| |
Petrov, R. H. | Madrid |
|
Alshaaer, Mazen | Brussels |
|
Bih, L. |
| |
Casati, R. |
| |
Muller, Hermance |
| |
Kočí, Jan | Prague |
|
Šuljagić, Marija |
| |
Kalteremidou, Kalliopi-Artemi | Brussels |
|
Azam, Siraj |
| |
Ospanova, Alyiya |
| |
Blanpain, Bart |
| |
Ali, M. A. |
| |
Popa, V. |
| |
Rančić, M. |
| |
Ollier, Nadège |
| |
Azevedo, Nuno Monteiro |
| |
Landes, Michael |
| |
Rignanese, Gian-Marco |
|
Delobbe, Anne
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (5/5 displayed)
- 2023Roadmap for focused ion beam technologiescitations
- 2023Roadmap for focused ion beam technologiescitations
- 2019Deterministic 3D self-assembly of Si through a rim-less and topology-preserving dewetting regime
- 2019Deterministic three-dimensional self-assembly of Si through a rimless and topology-preserving dewetting regimecitations
- 2011In-Plane Epitaxial Growth of Self-Assembled Ge Nanowires on Si Substrates Patterned by a Focused Ion Beamcitations
Places of action
Organizations | Location | People |
---|
article
Deterministic 3D self-assembly of Si through a rim-less and topology-preserving dewetting regime
Abstract
International audience ; Capillary-driven mass transport in solids is typically understood in terms of surface-diffusion limited kinetics, leading to conventional solid-state dewetting of thin films. However, another mass transport mechanism, so-called surface-attachment/detachment limited kinetics, is possible. It can shrink a solid film preserving its original topology without breaking it in isolated islands and leads to faster dynamics for smaller film curvature in contrast with the opposite behavior observed for surface-diffusion limited kinetics. In this work, we present a novel rimless dewetting regime for Si, which is ascribed to effective attachment-limited kinetics mediated by the coexistence of crystalline and amorphous Si phases. Phase-field numerical simulations quantitatively reproduce the experimental observations assessing the main mass transport mechanism at play. The process can be exploited to obtain in a deterministic fashion monocrystalline islands (with 95% probability) pinned at ∼500 nm from a hole milled within closed patches.