| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Bahramy, Mohammad Saeed
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2022Hidden spin-orbital texture at the Γ ¯ -located valence band maximum of a transition metal dichalcogenide semiconductorcitations
- 2020Anisotropic Quantum Transport through a Single Spin Channel in the Magnetic Semiconductor EuTiO3citations
- 2020Evolution of Electronic States and Emergence of Superconductivity in the Polar Semiconductor GeTe by Doping Valence-Skipping Indiumcitations
- 2017Bulk Rashba Semiconductors and Related Quantum Phenomena.citations
- 2015Rich structural phase diagram and thermoelectric properties of layered tellurides Mo1-xNbxTe2citations
- 2012Three-dimensional bulk band dispersion in polar BiTeI with giant Rashba-type spin splittingcitations
- 2012Epitaxially Stabilized EuMoO3citations
- 2011Giant Rashba-type spin splitting in bulk BiTeIcitations
- 2008Magnetic phase stability and spin-dependent transport in ${mathrm{CeNi}}_{4}M$ ($M=mathrm{Sc}$, Ti, V, Cr, Mn, Fe, and Co)citations
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article
Evolution of Electronic States and Emergence of Superconductivity in the Polar Semiconductor GeTe by Doping Valence-Skipping Indium
Abstract
<p>GeTe is a chemically simple IV-VI semiconductor which bears a rich plethora of different physical properties induced by doping and external stimuli. Here, we report a superconductor-semiconductor-superconductor transition controlled by finely-tuned In doping. Our results reveal the existence of a critical doping concentration xc=0.12 in Ge1-xInxTe, where various properties, including structure, resistivity, charge carrier type, and the density of states, take either an extremum or change their character. At the same time, we find indications of a change in the In-valence state from In3+ to In1+ with increasing x by core-level photoemission spectroscopy, suggesting that this system is a new promising playground to probe valence fluctuations and their possible impact on structural, electronic, and thermodynamic properties of their host.</p>