| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Dendzik, Maciej
KTH Royal Institute of Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2022A machine learning route between band mapping and band structurecitations
- 2021Ultrafast dynamical Lifshitz transitioncitations
- 2018Quasi-free-standing single-layer WS2 achieved by intercalationcitations
- 2018Synthesis of large area and high quality MoS<SUB>2</SUB> on Au(111) monolayers with single domain orientation
- 2018Quasi-free-standing single-layer $mathrm{WS_{2}}$ achieved by intercalationcitations
- 2017Spin and valley control of free carriers in single-layer WS2citations
- 2017Ultrafast band structure control of a two-dimensional heterostructurecitations
- 2017Spin and valley control of free carriers in single-layer WS 2citations
- 2016Ultrafast Band Structure Control of a Two-Dimensional Heterostructurecitations
- 2016Ultrafast band structure control of a two-dimensional heterostructurecitations
- 2015Electronic Structure of Epitaxial Single-Layer MoS2citations
- 2015Electronic structure of epitaxial single-layer MoS2citations
- 2015Synthesis of Epitaxial Single-Layer MoS 2 on Au(111)citations
- 2015Synthesis of Epitaxial Single-Layer MoS2 on Au(111)citations
Places of action
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article
Electronic structure of epitaxial single-layer MoS2
Abstract
<p>The electronic structure of epitaxial single-layer MoS2 on Au(111) is investigated by angle-resolved photoemission spectroscopy. Pristine and potassium-doped layers are studied in order to gain access to the conduction band. The potassium-doped layer is found to have a (1.39±0.05)eV direct band gap at K¯ with the valence band top at Γ¯ having a significantly higher binding energy than at K¯. The moiré superstructure of the epitaxial system does not lead to the presence of observable replica bands or minigaps. The degeneracy of the upper valence band at K¯ is found to be lifted by the spin-orbit interaction, leading to a splitting of (145±4)meV. This splitting is anisotropic and in excellent agreement with recent calculations. Finally, it is shown that the potassium doping does not only give rise to a rigid shift of the band structure but also to a distortion, leading to the possibility of band structure engineering in single-layers of transition metal dichalcogenides.</p>