| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Renaud, Gilles
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2024In situ characterisation of graphene growth on liquid copper-gallium alloys: Paving the path for cost-effective synthesiscitations
- 2024Operando characterization and molecular simulations reveal the growth kinetics of graphene on liquid copper during chemical vapor depositioncitations
- 2024Operando Characterization and Molecular Simulations Reveal the Growth Kinetics of Graphene on Liquid Copper During Chemical Vapor Depositioncitations
- 2022Tripling of the scattering vector range of X-ray reflectivity on liquid surfaces using a double crystal deflector
- 2022In situ resonant x-ray scattering at the French “CRG-IF” beamline at ESRF
- 2022In situ resonant x-ray scattering at the French “CRG-IF” beamline at ESRF
- 2020Al-rich Fe0.85 Al0.15 (100), (110) and (111) surface structurescitations
- 2019Room Temperature Commensurate Charge Density Wave in Epitaxial Strained TiTe 2 Multilayer Filmscitations
- 2016Temperature evolution of defects and atomic ordering in Si1-xGex islands on Si(001)citations
- 2015The In situ growth of Nanostructures on Surfaces (INS) endstation of the ESRF BM32 beamline: a combined UHV–CVD and MBE reactor for in situ X-ray scattering investigations of growing nanoparticles and semiconductor nanowirescitations
- 2015The In situ growth of Nanostructures on Surfaces (INS) endstation of the ESRF BM32 beamline: a combined UHV–CVD and MBE reactor for in situ X-ray scattering investigations of growing nanoparticles and semiconductor nanowirescitations
- 2013Strains Induced by Point Defects in Graphene on a Metalcitations
- 2013Strains Induced by Point Defects in Graphene on a Metalcitations
- 2012Epitaxial orientation changes in a dewetting gold film on Si(111).citations
- 2011Tracking defect type and strain relaxation in patterned Ge/Si(001) islands by x-ray forbidden reflection analysiscitations
- 2010Substrate-enhanced supercooling in AuSi eutectic dropletscitations
- 2008Growth of Co on Au(111) studied by multiwavelength anomalous grazing-incidence small-angle x-ray scattering: From ordered nanostructures to percolated thin films and nanopillarscitations
Places of action
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article
Strains Induced by Point Defects in Graphene on a Metal
Abstract
Strains strongly affect the properties of low-dimensional materials, such as graphene. By combining in situ, in operando, reflection high energy electron diffraction experiments with first-principles calculations, we show that large strains, above 2%, are present in graphene during its growth by chemical vapor deposition on Ir(111) and when it is subjected to oxygen etching and ion bombardment. Our results unravel the microscopic relationship between point defects and strains in epitaxial graphene and suggest new avenues for graphene nanostructuring and engineering its properties through introduction of defects and intercalation of atoms and molecules between graphene and its metal substrate.