Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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1.080 Topics available

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977 Locations available

693.932 PEOPLE
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Show results for 693.932 people that are selected by your search filters.

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Naji, M.
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Gambarelli, S.

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (8/8 displayed)

  • 2022Impact of gigahertz and terahertz transport regimes on spin propagation and conversion in the antiferromagnet IrMncitations
  • 2022Impact of gigahertz and terahertz transport regimes on spin propagation and conversion in the antiferromagnet IrMn14citations
  • 2022Impact of GHz and THz transport regimes on spin propagation and conversion in the antiferromagnet IrMn14citations
  • 2021Impact of GHz and THz transport regimes on spin propagation and conversion in the antiferromagnet IrMncitations
  • 2016Experimental characterization of the post-cracking response in Hybrid Steel/Polypropylene Fiber-Reinforced Concrete162citations
  • 2014Spin pumping and inverse spin Hall effect in platinum and other 5 d metals: the essential role of spin-memory loss and spin-current discontinuities at interfaces4citations
  • 2012Crossover from Spin Accumulation into Interface States to Spin Injection in the Germanium Conduction Band84citations
  • 2012Crossover from Spin Accumulation into Interface States to Spin Injection in the Germanium Conduction Band84citations

Places of action

Chart of shared publication
Kampfrath, Tobias
2 / 25 shared
Nadvornik, L.
1 / 3 shared
Kirchhof, Jan Niklas
2 / 4 shared
Baltz, V.
1 / 2 shared
Bolotin, Kirill
1 / 4 shared
Seeger, R. L.
3 / 3 shared
Gueckstock, Oliver
2 / 10 shared
Auffret, S.
4 / 14 shared
Seifert, Tom Sebastian
1 / 4 shared
Seeger, Rl
1 / 1 shared
Bolotin, K. I.
3 / 3 shared
Seifert, T. S.
3 / 4 shared
Nádvorník, Lukáš
1 / 7 shared
Baltz, Vincent
4 / 22 shared
Kirchhof, J. N.
2 / 2 shared
Kampfrath, T.
2 / 3 shared
Gueckstock, O.
2 / 5 shared
Nádvorník, L.
2 / 5 shared
Martinelli, E.
1 / 36 shared
Caggiano, A.
1 / 46 shared
Nistico, N.
1 / 1 shared
Pepe, M.
1 / 13 shared
Reyren, N.
1 / 9 shared
Deranlot, C.
1 / 7 shared
Jaffrès, H.
1 / 12 shared
Attané, J.-P
1 / 1 shared
Savero, W.
1 / 1 shared
Rojas-Sánchez, J.-C.
1 / 13 shared
Laczkowski, P.
1 / 5 shared
Vila, L.
3 / 17 shared
George, J.-M., T.
1 / 1 shared
Jamet, M.
3 / 15 shared
Louahadj, L.
2 / 3 shared
Jain, A.
2 / 17 shared
Prestat, E.
2 / 5 shared
Cubukcu, M.
2 / 9 shared
Rojas-Sánchez, C.
2 / 2 shared
Ducruet, C.
2 / 3 shared
Vergnaud, Céline
1 / 15 shared
Attane, J.-P.
2 / 2 shared
Jaffres, H.
2 / 5 shared
Portemont, C.
2 / 3 shared
Barski, A.
2 / 4 shared
Desfonds, G.
2 / 2 shared
Peiro, J.
2 / 2 shared
Bayle-Guillemaud, Pascale
2 / 10 shared
Augendre, E.
2 / 3 shared
Breton, J. C. Le
1 / 1 shared
George, J. M.
2 / 7 shared
Le Breton, J. C.
1 / 1 shared
Vergnaud, C.
1 / 4 shared
Chart of publication period
2022
2021
2016
2014
2012

Co-Authors (by relevance)

  • Kampfrath, Tobias
  • Nadvornik, L.
  • Kirchhof, Jan Niklas
  • Baltz, V.
  • Bolotin, Kirill
  • Seeger, R. L.
  • Gueckstock, Oliver
  • Auffret, S.
  • Seifert, Tom Sebastian
  • Seeger, Rl
  • Bolotin, K. I.
  • Seifert, T. S.
  • Nádvorník, Lukáš
  • Baltz, Vincent
  • Kirchhof, J. N.
  • Kampfrath, T.
  • Gueckstock, O.
  • Nádvorník, L.
  • Martinelli, E.
  • Caggiano, A.
  • Nistico, N.
  • Pepe, M.
  • Reyren, N.
  • Deranlot, C.
  • Jaffrès, H.
  • Attané, J.-P
  • Savero, W.
  • Rojas-Sánchez, J.-C.
  • Laczkowski, P.
  • Vila, L.
  • George, J.-M., T.
  • Jamet, M.
  • Louahadj, L.
  • Jain, A.
  • Prestat, E.
  • Cubukcu, M.
  • Rojas-Sánchez, C.
  • Ducruet, C.
  • Vergnaud, Céline
  • Attane, J.-P.
  • Jaffres, H.
  • Portemont, C.
  • Barski, A.
  • Desfonds, G.
  • Peiro, J.
  • Bayle-Guillemaud, Pascale
  • Augendre, E.
  • Breton, J. C. Le
  • George, J. M.
  • Le Breton, J. C.
  • Vergnaud, C.
OrganizationsLocationPeople

article

Crossover from Spin Accumulation into Interface States to Spin Injection in the Germanium Conduction Band

  • Louahadj, L.
  • Jain, A.
  • Gambarelli, S.
  • Prestat, E.
  • Cubukcu, M.
  • Rojas-Sánchez, C.
  • Ducruet, C.
  • Vergnaud, Céline
  • Attane, J.-P.
  • Jaffres, H.
  • Portemont, C.
  • Barski, A.
  • Vila, L.
  • Jamet, M.
  • Desfonds, G.
  • Peiro, J.
  • Baltz, Vincent
  • Bayle-Guillemaud, Pascale
  • Augendre, E.
  • Breton, J. C. Le
  • George, J. M.
Abstract

Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in the spin injection mechanism from a magnetic tunnel junction into a semiconductor is still under debate. In this Letter, we demonstrate a clear transition from spin accumulation into interface states to spin injection in the conduction band of n-Ge. We observe spin signal amplification at low temperature due to spin accumulation into interface states followed by a clear transition towards spin injection in the conduction band from 200 K up to room temperature. In this regime, the spin signal is reduced to a value compatible with the spin diffusion model. More interestingly, the observation in this regime of inverse spin Hall effect in germanium generated by spin pumping and the modulation of the spin signal by a gate voltage clearly demonstrate spin accumulation in the germanium conduction band.

Topics
  • impedance spectroscopy
  • semiconductor
  • Germanium