| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Freitas, Pp
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Publications (7/7 displayed)
- 2017Bipolar resistive switching in Si/Ag nanostructurescitations
- 2017Unipolar Nonvolatile Resistive Switching in Pt/MgO/Ta/Ru Structures Deposited by Magnetron Sputteringcitations
- 2016Femtosecond control of electric currents in metallic ferromagnetic heterostructurescitations
- 2011Resonant Tunneling through Electronic Trapping States in Thin MgO Magnetic Junctionscitations
- 2009The effect of pinhole formation/growth on the tunnel magnetoresistance of MgO-based magnetic tunnel junctionscitations
- 2009Electroforming, magnetic and resistive switching in MgO-based tunnel junctionscitations
- 2004Peculiar magnetic and electrical properties near structural percolation in metal-insulator granular layerscitations
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article
Resonant Tunneling through Electronic Trapping States in Thin MgO Magnetic Junctions
Abstract
We report an inelastic electron tunneling spectroscopy study on MgO magnetic junctions with thin barriers (0.85-1.35 nm). Inelastic electron tunneling spectroscopy reveals resonant electronic trapping within the barrier for voltages V > 0: 15 V. These trapping features are associated with defects in the barrier crystalline structure, as confirmed by high-resolution transmission electron microscopy. Such defects are responsible for resonant tunneling due to energy levels that are formed in the barrier. A model was applied to determine the average location and energy level of the traps, indicating that they are mostly located in the middle of the MgO barrier, in accordance with the high-resolution transmission electron microscopy data and trap-assisted tunneling conductance theory. Evidence of the influence of trapping on the voltage dependence of tunnel magnetoresistance is shown.