| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Cardoso, S.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2022Labeling on a Chip of Cellular Fibronectin and Matrix Metallopeptidase-9 in Human Serumcitations
- 2022Seebeck effect and Joule heating in CoFeB/MgO/CoFeB-based perpendicular magnetic tunnel junctions with low resistance area productcitations
- 2020Orthorhombic GdMnO<sub>3</sub> Epitaxial Thin Film Grown onto SrTiO<sub>3</sub> (110)
- 2018All-spinel oxide Josephson junctions for high-efficiency spin filtering.
- 2017Bipolar resistive switching in Si/Ag nanostructurescitations
- 2017Unipolar Nonvolatile Resistive Switching in Pt/MgO/Ta/Ru Structures Deposited by Magnetron Sputteringcitations
- 2015Characterization tests for insulation boards made from corn cob and natural glues
- 2013Coupling and induced depinning of magnetic domain walls in adjacent spin valve nanotrackscitations
- 2011Resonant Tunneling through Electronic Trapping States in Thin MgO Magnetic Junctionscitations
- 2004Peculiar magnetic and electrical properties near structural percolation in metal-insulator granular layerscitations
Places of action
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article
Resonant Tunneling through Electronic Trapping States in Thin MgO Magnetic Junctions
Abstract
We report an inelastic electron tunneling spectroscopy study on MgO magnetic junctions with thin barriers (0.85-1.35 nm). Inelastic electron tunneling spectroscopy reveals resonant electronic trapping within the barrier for voltages V > 0: 15 V. These trapping features are associated with defects in the barrier crystalline structure, as confirmed by high-resolution transmission electron microscopy. Such defects are responsible for resonant tunneling due to energy levels that are formed in the barrier. A model was applied to determine the average location and energy level of the traps, indicating that they are mostly located in the middle of the MgO barrier, in accordance with the high-resolution transmission electron microscopy data and trap-assisted tunneling conductance theory. Evidence of the influence of trapping on the voltage dependence of tunnel magnetoresistance is shown.